APT6013B2FLL APT6013LFLL 600V 43A 0.130Ω POWER MOS 7 R FREDFET B2FLL T-MAX™ ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID LFLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol TO-264 D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT6013B2LL_LLL UNIT 600 Volts Drain-Source Voltage 43 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 565 Watts Linear Derating Factor 4.52 W/°C PD TJ,TSTG 1 172 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 43 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 21.5A) TYP MAX UNIT Volts 0.130 Ohms Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 9-2004 Characteristic / Test Conditions 050-7071 Rev B Symbol APT6013B2FLL_LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 300V tf ID = 43A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 635 VDD = 400V, VGS = 15V 585 ID = 43A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 8 RG = 0.6Ω Eon UNIT pF 70 130 25 40 11 14 27 ID = 43A @ 25°C Turn-off Delay Time MAX 5630 1060 VDD = 300V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 1030 VDD = 400V, VGS = 15V ID = 43A, RG = 5Ω 695 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 172 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -43A) 1.3 Volts dv/ Peak Diode Recovery 15 V/ns dt dv/ dt 43 5 t rr Reverse Recovery Time (IS = -43A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 500 Q rr Reverse Recovery Charge (IS = -43A, di/dt = 100A/µs) Tj = 25°C 2.27 Tj = 125°C 6.87 IRRM Peak Recovery Current (IS = -43A, di/dt = 100A/µs) Tj = 25°C 14.2 Tj = 125°C 27 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.22 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.5 Note: 0.10 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7071 Rev B 9-2004 0.25 0.15 0.3 0 t1 t2 0.05 0.1 0.05 10-5 SINGLE PULSE 10-4 °C/W 4 Starting Tj = +25°C, L = 2.70mH, RG = 25Ω, Peak IL = 43A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID43A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.20 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1 Typical Performance Curves APT6013B2FLL_LFLL 120 VGS =15 &10V 0.014 Power (watts) 0.076 0.13 0.006F 0.019F 0.278F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (°C) 100 8V 80 7V 60 6.5V 40 6V 20 5.5V 5V Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 100 80 60 40 TJ = +125°C 20 TJ = -55°C 0 1 2 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D V NORMALIZED TO = 10V @ I = 21.5A GS D VGS=10V 1.10 1.05 VGS=20V 1.00 0.95 0.90 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 21.5A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.15 1.15 45 0.0 -50 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 9-2004 0 TJ = +25°C 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 050-7071 Rev B ID, DRAIN CURRENT (AMPERES) 140 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 172 10,000 100µS 10 1mS 1 TC =+25°C TJ =+150°C SINGLE PULSE C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 100 = 43A 12 VDS= 120V 8 VDS= 480V 4 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 0 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 DD G 100 = 400V = 5Ω R DD R G = 400V T = 125°C J 80 = 5Ω tr and tf (ns) V 60 T = 125°C J L = 100µH 40 tf 60 40 20 0 10 2000 20 0 10 40 50 60 70 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G 1600 tr td(on) 30 40 50 60 70 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3000 = 400V I 2500 T = 125°C J L = 100µH EON includes diode reverse recovery 1200 800 Eon Eoff 400 0 10 20 V = 5Ω SWITCHING ENERGY (µJ) td(on) and td(off) (ns) 100 L = 100µH 20 Eon and Eoff (µJ) 0 V 80 9-2004 Crss 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 td(off) 050-7071 Rev B 100 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 VDS= 300V Coss 1,000 10 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D Ciss 10mS 1 I APT6013B2FLL_LFLL 20,000 OPERATION HERE LIMITED BY RDS (ON) DD D 30 = 400V = 43A T = 125°C J L = 100µH EON includes 2000 Eoff diode reverse recovery 1500 Eon 1000 500 20 30 40 50 60 70 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT6013B2FLL_LFLL T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain Source 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 9-2004 4.50 (.177) Max. 25.48 (1.003) 26.49 (1.043) 050-7071 Rev B Drain Drain 20.80 (.819) 21.46 (.845)