MJ10021 T−NPN, Si, Darlington w/Base−Emitter Speedup Diode Description: The MJ10021 is a Darlington transistor in a TO3 type package designed for high−voltage, high− speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line operated switchmode applications. Features: D Continuous Collector Current − IC = 60A Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers D AC and DC Motor Controls Absolute Maximum Ratings: Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector−Emitter Voltage, VCEO(SUS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0V Collector Current Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Peak, ICM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation, PD TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143W Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C Operating Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(SUS) IC = 100mA, IB = 0 ICEV VCEV = 250V, VBE(OFF) = 1.5V 1 5V TC = 150°C 250 − − V − − 0.25 mA − − 5.0 mA ICER VCEV = 250V, RBE = 50Ω, TC = +100°C − − 5.0 mA IEBO VEB = 2V, IC = 0 − − 175 mA Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit On Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage hFE IC = 15A, VCE = 5V 75 − 1000 VCE(sat) ( ) IC = 30A, IB = 1.2A − − 2.2 V IC = 60A, IB = 4A − − 4.0 V IC = 30A, IB 1.2A, TC = +100°C − − 2.4 V IC = 30A, IB = 1.2A − − 3.0 V − − 3.5 V − − 5.0 V 160 − 750 pF − − 0.2 us − − 1.0 us VBE(sat) ( ) TC = +100°C Diode Forward Voltage VF IF = 30A Cob VCB = 10V, IE = 0, f = 1kHz Dynamic Characteristics Output Capacitance Switching Characteristics Delay Time td Rise Time tr Storage Time ts − − 3.5 us Fall Time tf − − 0.8 us VCC = 175V, IC = 30A, IB1 = 1.2A, VBE(off) 5V, tp = 25us 25us, Duty Cycle ≤ 2% BE( ff) = 5V Note 1. Pulse Test: Pulse width = 300µs, Duty Cycle ≤ 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane C .312 (7.93) Min Emitter .040 (1.02) B 1.187 (30.16) 100 .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case 15 E