MOSPEC SWITCHMODE SERIES NPN SILICON TRANSISTORS NPN MJ13332 MJ13333 MJ13334 MJ13335 …designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical , They are particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and relay drivers * Motor Controls * Deflection Circuits Fast Turn-off Times o 400ns Inductive Fall Time –25 C( Typ ) o 2.5 us Inductive Storage Time—25 C( Typ ) o Operating Temperature Range –65 C to +200oC o 100 C performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Leakage Currents 20 AMPERES POWER TRANSISTOR NPN SILICON 350-500 VOLTS 175 WATTS MAXIMUM RATINGS Rating Symbol MJ13332 MJ13333 MJ13334 MJ13335 Unit Collector-Emitter Voltage VCEV 650 700 750 800 V Collector-Emitter Voltage VCEO 350 400 450 500 V Emitter-Base Voltage Collector Current-Continuous Peak Base Current Total Device Dissipation @ TC=25oC Derate above 25oC Operating and Storage Junction Temperature Range VEB IC ICM IB PD TJ , TSTG 6.0 20 30 10 275 1.0 TO-3 V A A Watts W/oC o -65 to +200 C THERMAL CHARACTERISTICS Characteristic Thermal Resistance to Case Symbol Max RθJC 1.0 Unit o C/W PIN 1.BASE 2.EMITTER COLLECTOR(CASE) DIM A B C D E F G H I J K MILLIMETERS MIN MAX 38.75 39.96 19.28 22.23 7.96 9.28 11.18 12.19 25.20 26.67 0.92 1.09 1.38 1.62 29.90 30.40 16.64 17.30 3.88 4.36 10.67 11.18 MJ13332, MJ13333, MJ13334, MJ13335 NPN ELECTRICAL CHARATERISTICS (TC=25OC unless otherwise noted) Characteristic Symbol Min. Typ. Max Unit VCEO(sus) 350 400 450 500 ----- ----- V -- -- 5.0 -- -- 1.0 10 -- 60 --- --- 1.8 5.0 -- -- 1.8 125 -- 500 -- -- 0.1 -- -- 0.7 -- -- 4.0 -- -- 0.7 OFFCHARACTERISTICS Collector-Emitter Sustaining Voltage ( IC = 100 mAdc, IB = 0 ) MJ13332 MJ13333 MJ13334 MJ13335 Collector Current ( VCE = Rated VCEV, VBE(off) = 1.5V ) Emitter Cutoff Current ( VBE= 6.0 Vdc, Ic = 0 ) ICEV IEBO mAdc mAdc ON CHARACTERISTICS(1) DC current gain ( IC = 5.0 Adc, VCE = 5.0 Vdc ) Collector-Emitter Saturation Voltage ( IC = 10 Adc, IB = 2.0 Adc ) ( IC = 20 Adc, IB = 6.7 Adc ) Base-Emitter Saturation Voltage ( IC = 10 Adc, IB = 2.0 Adc ) hFE VCE(sat) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc, IE = 0 , f=1.0 KHz ) Cob pF SWITCHING CHARATERISTICS Delay time Rise Time Storage Time td Vcc=250V, IC=10A IB1=2.0A,VBE=5.0V,tP=10us Duty Cycle≦2.0% Fall Time (1) Pulse test: Pulse Width=300 s, Duty Cycle≦ 2.0% tr tS tr µs µs µs µs