isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJH16018 DESCRIPTION ·Collector-Emitter Voltage: VCEO(SUS)= 800V(Min) ·Fast Turn-Off Time APPLICATIONS Designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications as: ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 800 V Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 8 A IBM Base Current-Peak 12 A PC Collector Power Dissipation @TC=25℃ Collector Power Dissipation @TC=100℃ VEBO B Tj Tstg 150 W 50 150 ℃ -55~150 ℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R(th)j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJH16018 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A IC= 5A ;IB= 1A ;TC=100℃ 1.5 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 4A 1.5 V Base-Emitter Saturation Voltage IC= 5A ;IB= 1A IC= 5A ;IB= 1A ;TC=100℃ 1.5 1.5 V ICEV Collector Cutoff Current VCEV=1500V,VBE(off)=1.5V VCEV=1500V,VBE(off)=1.5V;TC=100℃ 0.25 1.5 mA ICER Collector Cutoff Current VCE=1500V;RBE=50Ω;TC=100℃ 2.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE DC Current Gain IC= 5A ; VCE= 5V COB Output Capacitance IE= 0; f= 1kHz ; VCB= 10V 400 pF 0.05 0.1 μs 0.3 0.4 μs 2 3 μs 0.9 1.2 μs VBE(sat) CONDITIONS MIN TYP. MAX 800 UNIT V 7 Switching times; Resistive load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC=5A; IB1= 1A;IB2= -2A; VCC= 250V ,RB2= 3Ω; PW=30μs Duty Cycle≤2%