Si6911DQ New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.026 @ VGS = -4.5 V -5.1 0.035 @ VGS = -2.5 V -4.5 0.046 @ VGS = -1.8 V -3.9 APPLICATIONS D Load Switch D Battery Switch S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D G2 6 S2 5 G2 Top View D1 Ordering Information: Si6911DQ T-1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD -4.3 -4.1 IDM Continuous Source Current (Diode Conduction)a V -5.1 ID -3.5 A -30 -1.0 -0.7 1.14 0.83 0.73 0.53 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 86 110 124 150 59 75 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72231 S-31064—Rev. A, 26-May-03 www.vishay.com 1 Si6911DQ New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = -300 mA -0.4 Typ Max Unit -0.9 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS = 0 V, VGS = "8 V Diode Forward Voltagea -1 -25 VDS = -5 V, VGS = -4.5 V rDS(on) Forward Transconductancea VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 70_C mA -20 A VGS = -4.5 V, ID = -5.1 A 0.021 0.026 VGS = -2.5 V, ID = -4.5 A 0.028 0.035 VGS = -1.8 V, ID = -3.9 A 0.037 0.046 gfs VDS = -5 V, ID = -5.1 A 20 VSD IS = -1.0 A, VGS = 0 V -0.65 -1.1 16 24 VDS = -6 V, VGS = -4.5 V, ID = -5.1 A 1.9 W W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs nC Gate-Drain Charge Qgd 3.9 Turn-On Delay Time td(on) 35 55 tr 62 100 120 180 70 110 65 100 Rise Time Turn-Off Delay Time VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = -1.0 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 TC = -55_C VGS = 5 thru 2.5 V 2V 18 12 6 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 125_C 18 12 6 1.5 V 0 2 25_C 24 I D - Drain Current (A) I D - Drain Current (A) 24 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 72231 S-31064—Rev. A, 26-May-03 Si6911DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2500 0.08 2000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.10 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 Ciss 1500 1000 Coss 500 Crss VGS = 4.5 V 0.00 0 0 6 12 18 24 30 0 2 ID - Drain Current (A) Gate Charge 8 10 12 On-Resistance vs. Junction Temperature 1.6 VDS = 6 V ID = 5.1 A 5 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) 6 4 3 2 VGS = 4.5 V ID = 5.1 A 1.4 1.2 1.0 0.8 1 0 0 4 8 12 16 0.6 -50 20 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 0 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.2 0.0 -25 TJ - Junction Temperature (_C) 40 I S - Source Current (A) 4 0.08 ID = 5.1 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 72231 S-31064—Rev. A, 26-May-03 1.4 1.6 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si6911DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 200 0.3 160 0.2 ID = 300 mA Power (W) V GS(th) Variance (V) Threshold Voltage 0.4 0.1 120 80 0.0 40 -0.1 -0.2 -50 -25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (sec) TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 I D - Drain Current (A) 10 Limited by rDS(on) 1 ms 10 ms 1 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 124_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72231 S-31064—Rev. A, 26-May-03 Si6911DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 Document Number: 72231 S-31064—Rev. A, 26-May-03 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5