Si4451DY New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.00825 @ VGS = - 4.5 V - 14 0.01025 @ VGS = - 2.5 V - 13 0.013 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch D Battery Switch S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C V - 10 - 14 ID TA = 70_C Pulsed Drain Current - 11 IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD -8 A - 40 - 2.7 - 1.35 3.0 1.5 1.9 0.95 TJ, Tstg W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 33 42 70 85 17 21 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72115 S-03160—Rev. A, 17-Feb-03 www.vishay.com 1 Si4451DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 850 mA - 0.40 Typ Max Unit - 0.8 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 70_C -5 VDS = - 5 V, VGS = - 4.5 V - 30 A VGS = - 4.5 V, ID = - 14 A Drain-Source On-State Resistancea Forward Transconductancea Diode Forward 0.0065 0.00825 VGS = - 2.5 V, ID = - 13 A 0.008 0.01025 VGS = - 1.8 V, ID = - 12 A 0.0105 0.013 gfs VDS = - 10 V, ID = - 14 A 55 VSD IS = - 2.7 A, VGS = 0 V - 0.6 - 1.1 81 120 rDS(on) Voltagea mA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 23.4 Gate Resistance Rg 3.0 Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = - 6 V, VGS = - 4.5 V, ID = - 14 A 8.6 nC W td(on) 55 85 tr 125 190 315 480 235 360 185 300 VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = - 2.7 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 VGS = 5 thru 2 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 1.5 V 24 16 8 24 16 TC = 125_C 8 25_C - 55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Document Number: 72115 S-03160—Rev. A, 17-Feb-03 Si4451DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 9000 0.020 7200 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.025 0.015 VGS = 1.8 V VGS = 2.5 V 0.010 0.005 Ciss 5400 3600 Coss Crss 1800 VGS = 4.5 V 0.000 0 0 8 16 24 32 40 0 2 4 ID - Drain Current (A) Gate Charge 10 12 On-Resistance vs. Junction Temperature 1.3 VDS = 6 V ID = 14 A 5 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 8 VDS - Drain-to-Source Voltage (V) 6 4 3 2 VGS = 4.5 V ID = 14 A 1.2 1.1 1.0 0.9 1 0 0 21 42 63 84 0.8 - 50 105 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.040 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 1 0.1 0.0 25 TJ - Junction Temperature (_C) 100 I S - Source Current (A) 6 TJ = 25_C 0.032 ID = 14 A 0.024 0.016 0.008 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72115 S-03160—Rev. A, 17-Feb-03 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4451DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 850 mA 0.2 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ - Temperature (_C) 10 100 600 Time (sec) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 dc TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72115 S-03160—Rev. A, 17-Feb-03 Si4451DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72115 S-03160—Rev. A, 17-Feb-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5