VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Vishay Semiconductors Phase Control SCR, 70 A FEATURES 2 (A) • High surge capability • High voltage input rectification • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level Super TO-247 1 (K) (G) 3 APPLICATIONS • AC switches • High voltage input rectification (soft start) PRODUCT SUMMARY • High current crow-bar Package Super TO-247 Diode variation Single SCR IT(AV) 70 A VDRM 1200 V, 1600 V VTM 1.4 V DESCRIPTION IGT 100 A TJ - 40 °C to 125 °C The VS-70TPS..PbF High Voltage Series of silicon controlled rectifiers are specifically designed for high and medium power switching, and phase control applications. • Other phase-control circuits • Designed to be used with Vishay input diodes, switches, and output rectifiers which are available in identical package outlines MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES IT(AV) Sinusoidal waveform 70 IRMS Lead current limitation 75 VRRM/VDRM Range UNITS A 1200/1600 V 1400 A 1.4 V dV/dt 500 V/μs dI/dt 150 A/μs - 40 to 125 °C PART NUMBER VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA VS-70TPS12PbF 1200 1300 VS-70TPS16PbF 1600 1700 ITSM 100 A, TJ = 25 °C VT TJ VOLTAGE RATINGS 15 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94391 Revision: 07-Dec-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Vishay Semiconductors Phase Control SCR, 70 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum continuous RMS on-state current as AC switch IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS VALUES TC = 82 °C, 180° conduction half sine wave 70 Lead current limitation 75 10 ms sine pulse, rated VRRM applied 1400 Initial TJ = TJ maximum 7200 10 ms sine pulse, no voltage reapplied 10 200 t = 0.1 ms to 10 ms, no voltage reapplied 102 000 Low level value of threshold voltage VT(TO)1 0.916 High level value of threshold voltage VT(TO)2 1.21 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 A 1200 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied UNITS TJ = 125 °C 4.138 3.43 A2s A2s V m Maximum peak on-state voltage VTM 100 A, TJ = 25 °C 1.4 V Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 150 A/μs Maximum holding current IH Maximum latching current IL Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage IRRM/IDRM dV/dt 200 TJ = 25 °C 400 TJ = 25 °C TJ = 125 °C 1.0 VR = Rated VRRM/VDRM TJ = 125 °C mA 15 500 V/μs VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage PGM PG(AV) TEST CONDITIONS 10 T = 30 μs 2.5 IGM 2.5 - VGM 10 TJ = - 40 °C Maximum required DC gate voltage to trigger VGT TJ = 25 °C 4.0 Anode supply = 6 V resistive load 1.5 TJ = 125 °C 1.1 TJ = - 40 °C 270 Maximum required DC gate current to trigger IGT TJ = 25 °C 100 Maximum DC gate voltage not to trigger VGD TJ = 120 °C, VDRM = Rated value Maximum DC gate current not to trigger IGD TJ = 125 °C www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] W A V mA 80 0.25 V 6 mA Document Number: 94391 Revision: 07-Dec-10 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Phase Control SCR, 70 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum junction temperature range TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation °C 0.27 40 Mounting surface, smooth and greased °C/W 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque UNITS Marking device 70TPS12 Case style Super TO-247 70TPS16 RthJ-hs CONDUCTION PER JUNCTION SINE HALF WAVE CONDUCTION DEVICE VS-70TPS..PbF RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 UNITS °C/W 130 RthJC (DC) = 0.27 ˚C/W 120 110 Conduction Angle 30˚ 100 60˚ 90 90˚ 120˚ 180˚ 80 70 0 10 20 30 40 50 60 70 80 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 RthJC (DC) = 0.27 ˚C/W 120 DC 110 Conduction Period 100 180˚ 90 80 30˚ 70 60˚ 90˚ 120˚ 60 0 10 20 30 40 50 60 70 80 90 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Document Number: 94391 Revision: 07-Dec-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series 1300 180˚ 120˚ 90˚ 60˚ 30˚ 120 100 80 1100 1000 RMS Limit 60 40 Conduction Angle 20 Tj = 125˚C 0 0 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1200 10 20 30 40 50 60 70 900 800 700 600 500 1 10 100 Average On-state Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 140 Peak Half Sine Wave On-state Current (A) Phase Control SCR, 70 A Vishay Semiconductors 150 180˚ 120˚ 90˚ 60˚ 30˚ 120 90 DC RMS Limit 60 Conduction Period 30 Tj = 125˚C 0 0 15 30 45 60 75 1500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 1300 Initial Tj = 125˚C No Voltage Reapplied 1200 Rated Vrrm Reapplied 1400 1100 1000 900 800 700 600 500 0.01 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 Tj = 125˚C 100 10 Tj = 25˚C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94391 Revision: 07-Dec-10 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Phase Control SCR, 70 A 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) VGD IGD 0.1 0.001 0.01 TJ = -40 ˚C TJ = 125 ˚C 1 TJ = 25 ˚C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors 70TPS.. Series (4) (3) (2) (1) Frequency Limited by PG(AV) 0.1 1 10 Instantaneous Gate Current (A) 100 1000 Transient Thermal Impedance ZthJC (°C/W) Fig. 8 - Gate Characteristics 1 Steady State Value (DC Operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 70TPS.. Series 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 9 - Thermal Impedance ZthJC Characteristics Document Number: 94391 Revision: 07-Dec-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Phase Control SCR, 70 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 70 T P S 16 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (70 = 70 A) 3 - Circuit configuration: T = Thyristor 4 - Package: P = Super TO-247 5 - Type of silicon: S = Standard recovery rectifier 6 - 7 - Voltage code x 100 = VRRM 12 = 1200 V 16 = 1600 V None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95073 Part marking information www.vishay.com/doc?95070 www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94391 Revision: 07-Dec-10 Outline Dimensions Vishay High Power Products Super TO-247 DIMENSIONS in millimeters (inches) 16.10 (0.632) 15.10 (0.595) 2xR A 0.13 (0.005) 5.50 (0.216) 4.50 (0.178) 2.15 (0.084) 1.45 (0.058) 4 20.80 (0.818) 19.80 (0.780) C 1 2 3 4.25 (0.167) 3.85 (0.152) B 14.80 (0.582) 13.80 (0.544) 1.20 (0.047) 3x 3x 0.90 (0.035) 0.25 (0.010) M B A M 5.45 (0.215) 2x 2.35 (0.092) 1.65 (0.065) 0.25 (0.010) M B A M 13.90 (0.547) 13.30 (0.524) Ø 1.60 (0.063) MAX. 1.30 (0.051) 0.70 (0.028) 16.10 (0.633) 15.50 (0.611) 4 Section E - E Lead assignments E E MOSFET IGBT 1 - Gate 2 - Drain 3 - Source 4 - Drain 1 - Gate 2 - Collector 3 - Emitter 4 - Collector Notes (1) Dimension and tolerancing per ASME Y14.5M-1994 (2) Controlling dimension: millimeter (3) Outline conforms to JEDEC outline TO-274AA Document Number: 95073 Revision: 10-Dec-08 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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