MICROSEMI APTDR90X1601G

APTDR90X1601G
VRRM = 1600V
IC = 90A @ Tc = 80°C
3 Phase rectifier bridge
Power Module
1
2
Application
7
9
11
8
10
12
•
•
Input rectifiers for inverter
Battery DC power supply
Features
•
•
•
•
5
High blocking voltage
High surge current
Low leakage current
Very low stray inductance
- Symmetrical design
High level of integration
6
•
Benefits
•
•
•
•
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low profile
RoHS compliant
All multiple inputs and outputs must be shorted together
1/2 ; 5/6 ; 7/8 ; 9/10 ; 11/12
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
DC Forward Current
Non-Repetitive Forward Surge Current
t=10ms
TC = 80°C
TJ = 45°C
Max ratings
Unit
1600
V
90
850
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-3
APTDR90X1601G – Rev 1
Symbol
VR
VRRM
IF
IFSM
March, 2008
Absolute maximum ratings
APTDR90X1601G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
IR
Reverse Current
VR = 1600V
VF
Forward Voltage
IF = 90A
VT
rT
On – state Voltage
On – state Slope resistance
Min
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Typ
Max
50
4
1.3
1.1
0.8
4.8
Unit
µA
mA
V
V
mΩ
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3500
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
Max
0.85
150
125
100
4.7
80
Unit
°C/W
V
°C
N.m
g
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
2-3
APTDR90X1601G – Rev 1
March, 2008
SP1 Package outline (dimensions in mm)
APTDR90X1601G
Typical Performance Curve
Forward Characteristic
Non-Repetitive Forward Surge Current
1000
180
150
800
TJ=125°C
IFSM (A)
IF (A)
120
90
TJ=45°C
600
TJ=125°C
400
60
TJ=25°C
0
0.01
0
0.0
0.4
0.8
1.2
50Hz
80% VRRM
200
30
1.6
2.0
0.1
t (s)
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1
0.8
0.6
0.9
0.7
0.5
0.4
0.3
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
3-3
APTDR90X1601G – Rev 1
March, 2008
Rectangular Pulse Duration in Seconds