APTDC40H1201G SiC Diode Full Bridge Power Module 3 VRRM = 1200V IF = 40A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR1 CR3 CR2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10 • • SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration Benefits • • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs TC = 80°C TC = 25°C Max ratings Unit 1200 V 40 500 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDC40H1201G – Rev 0 Symbol VR VRRM IF(AV) IFSM February, 2009 Absolute maximum ratings APTDC40H1201G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current QC Total Capacitive Charge C Total Capacitance Test Conditions Min Tj = 25°C IF = 40A Tj = 175°C Tj = 25°C VR = 1200V Tj = 175°C IF = 40A, VR = 600V di/dt =2000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Typ 1.6 2.3 128 224 Max 1.8 3.0 800 4000 Unit V µA 160 nC 384 276 pF Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.5 175 125 100 4.7 80 Unit °C/W V °C N.m g See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 2-3 APTDC40H1201G – Rev 0 February, 2009 SP1 Package outline (dimensions in mm) APTDC40H1201G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 80 400 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 60 TJ=75°C 40 TJ=125°C TJ=175°C 20 300 200 TJ=75°C TJ=125°C 100 TJ=175°C TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 2800 2400 2000 1600 1200 800 400 0 1000 February, 2009 10 100 VR Reverse Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDC40H1201G – Rev 0 1