Single Phase Rectifier Bridges PSB 105 IdAVM VRRM = 107A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type ~ ~ PSB 105/08 PSB 105/12 PSB 105/14 PSB 105/16 PSB 105/18 Symbol Test Conditions IdAVM IFSM TC = 85°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 107 1500 1650 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1500 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 11250 11300 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9120 9350 A2 s A2 s -40 ... + 150 150 -40 ... + 150 °C °C °C 2500 3000 V∼ V∼ 5 5 235 Nm Nm g ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM ≤ ≤ 0.3 8.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM ≤ 1.6 0.8 5 V V mΩ per diode; DC current per module 0.83 0.21 K/W K/W RthJK per diode; DC current per module 1.13 0.28 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 17.6 17.6 50 mm mm m/s2 TVJ = 25°C TVJ = TVJM POWERSEM GmbH, Walperdorfer Str.53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 105 10 IF(OV) -----IFSM 200 TVJ=45°C 1.6 160 TVJ=150°C 1500 1350 1.4 T=150°C 120 2 As IFSM (A) A 5 1.2 10 4 TVJ=45°C 1 80 TVJ=150°C 0 VRRM 0.8 1/2 VRRM T=25°C 40 0.6 IF 1 VRRM 10 0.4 0 10 1.5 V Fig. 1 Forward current versus voltage drop per diode VF 300 [W] 1 0 10 1 t[ms] 10 2 10 3 1 2 3 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 80 TC PSB 105 0.19 0.11 250 = RTHCA [K/W] 0.28 85 120 90 [A] 95 100 200 110 115 150 125 50 PVTOT 0 130 1.77 135 140 145 °C 150 IFAVM 50 0 100 [A] Tamb 60 120 0.77 DC sin.180° rec.120° rec.60° rec.30° 90 105 0.44 100 DC sin.180° rec.120° rec.60° rec.30° 50 100 [K] 30 IdAV 0 50 100 150 200 TC(°C) 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 1.5 K/W Z thJK 1 Z thJC 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walperdorfer Str.53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions