Single Phase Rectifier Bridges PSB 192 IdAV VRRM = 174 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type ~ PSB 192/08 PSB 192/12 PSB 192/14 PSB 192/16 PSB 192/18 ~ Symbol Test Conditions IdAV IFSM TC = 100°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 174 2800 3300 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2500 2750 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 39200 45000 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 31200 31300 A2 s A2 s -40 ... + 150 150 -40 ... + 125 °C °C °C 2500 3000 V∼ V∼ 5 5 270 Nm Nm g ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M6) (M6) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM ≤ ≤ 0.3 5 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM ≤ 1.43 0.8 2.2 V V mΩ per diode; DC current per module 0.45 0.11 K/W K/W RthJK per diode; DC current per module 0.6 0.15 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 10 9.4 50 mm mm m/s2 TVJ = 25°C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 192 IF(OV) -----IFSM 200 5 10 2 As IFSM (A) TVJ=45°C TVJ=150°C [A] 1.6 2800 2500 TVJ=45°C 150 1.4 TVJ=150°C 10 1.2 100 4 1 0 VRRM 0.8 50 IF Tvj = 150°C 1/2 VRRM Tvj = 25°C 0.6 1 VRRM 10 0 0.5 1 1.5 VF [V] 0.4 2 0 10 Fig. 1 Forward current versus voltage drop per diode 400 [W] 1 2 10 t[ms] 10 85 TC 0.15 0.09 350 1 2 3 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration PSB 192 3 = RTHCA [K/W] 90 4 t [ms] 100 300 200 DC sin.180° rec.120° rec.60° rec.30° [A] 150 105 250 0.34 110 115 200 DC sin.180° rec.120° rec.60° rec.30° 100 50 PVTOT 0 125 130 100 140 145 °C 150 0 [A] 50 135 1.34 150 50 IFAVM 100 120 0.59 150 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 95 0.21 6 Tamb 50 100 [K] IdAV 0 50 100 150 200 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 1 K/W Z thJK 0.5 Z thJC Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions