Single Phase Rectifier Bridge PSB 36 IdAV VRRM = 30 A = 800-1800 V Preliminary Data Sheet VRSM VDSM (V) 800 1200 1400 1600 1800 VRRM VDRM (V) 800 1200 1400 1600 1800 Type PSB PSB PSB PSB PSB + ~ ~ 36/08 36/12 36/14 36/16 36/18 - Symbol Test Conditions IdAVM IFSM TC = 62 °C, (per module) TVJ = 45 °C ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VTO rT RthJC RthJK ds dA a Maximum Ratings 30 A t = 10 ms (50 Hz), sine 550 A VR = 0 t = 8.3 ms (60 Hz), sine 600 A TVJ = TVJM t = 10 ms (50 Hz), sine 500 A VR = 0 t = 8.3 ms (60 Hz), sine 550 A TVJ = 45 °C t = 10 ms (50 Hz), sine 1520 A²s VR = 0 t = 8.3 ms (60 Hz), sine 1520 A²s TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A²s VR = 0 t = 8.3 ms (60 Hz), sine 1250 A²s -40... + 150 150 °C °C -40... + 150 °C 50/60 Hz, RMS t = 1 min 2500 V∼ IISOL ≤ 1 mA 3000 V∼ 2 20 Nm g t=1s Mounting torque typ. (M5) Test Conditions Characteristic Value VR = VRRM, TVJ = TVJM ≤ 0.3 mA VR = VRRM, TVJ = 25°C ≤ 2.0 mA IF = 150 A, TVJ = 25 °C ≤ 1.7 V 0.8 V For power-loss calculations only 5.8 mΩ per diode; DC per module per diode; DC 6.2 1.55 7.4 K/W K/W K/W per module 1.85 K/W Creeping distance on surface Creeping distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s² Features • • • • • • Package with 1/4“ fast-on terminals Isolation voltage 3000 V∼ Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688 Applications • • • • Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Advantages • • • Easy to mount with one screw Space and weight savings Improved temperature and power cycling capability Package style and outline Dimensions in mm (1mm = 0.0394“) Data according to IEC 60747 refer to a single diode unless otherwise stated POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2002 POWERSEM reserves the right to change limits, test conditions and dimensions 200 [A] I F (OV) -- ---I F SM 1:TVJ= 150°C TVJ=45°C 2:TVJ= 25°C 4 10 2 As IFSM (A) TVJ=150°C 480 1.6 500 150 1.4 1.2 10 100 3 TVJ=45°C 1 TVJ=150°C 0 V RRM 0.8 50 1/2 V RRM 0.6 1 IF 1 V RRM 2 10 0.4 0 0.5 1 1.5 VF[V] 2 100 2.5 Fig. 1 Forward current versus 103 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration voltage drop per diode 70 [W] 101 t[ms] 102 2 1 2 4 t [ms] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 50 TC 55 PSB 36 0.36 60 = RTHCA [K/W] 50 60 65 0.71 DC sin.180° rec.120° rec.60° rec.30° [A] 70 75 50 40 80 85 1.43 90 40 95 30 100 105 30 2.86 110 20 115 DC sin.180° rec.120° rec.60° rec.30° 20 10 PVTOT 0 120 125 7.14 135 140 145 °C 150 0 20 IFAVM 130 [A] 50 100 Tamb 150 [K] Fig. 4 Power dissipation versus direct output current and ambient temperature 10 IdAV 0 50 100 TC(°C) 150 200 Fig.5 Maximum forward current at case temperature 8 K/W Z thJK 6 Z thJC 4 2 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2002 POWERSEM reserves the right to change limits, test conditions and dimensions