POWERSEM PSD61

Three Phase
Rectifier Bridges
PSD 61
IdAVM = 100 A
VRRM = 800-1800 V
Preliminary Data Sheet
VRSM
V
800
1200
1400
1600
1800
VRRM
V
800
1200
1400
1600
1800
Type
PSD 61/08
PSD 61/12
PSD 61/14
PSD 61/16
PSD 61/18
Symbol
Test Conditions
IdAVM
IFSM
TC = 100 module
∫ i2 dt
TVJ
TVJM
Tstg
VISOL
Md
Weight
Maximum Ratings
100
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1000
1100
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
900
990
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
5000
5020
A2 s
A2 s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
4050
4060
A2 s
A2 s
-40 ... + 150
150
-40 ... + 125
°C
°C
°C
2500
3000
V∼
V∼
5
100
Nm
g
50/60 HZ, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
typ.
(M5)
Features
• Package with fast-on terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 148688
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM
VR = VRRM
TVJ = 25°C
TVJ = TVJM
≤
≤
0.5
10
mA
mA
VF
VTO
rT
RthJC
IF = 150 A
TVJ = 25°C
≤
1.4
V
0.8
5
V
mΩ
per diode; DC current
per module
1.12
0.28
K/W
K/W
RthJK
per diode; DC current
per module
1.5
0.375
K/W
K/W
dS
dA
a
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
16.1
7.5
50
mm
mm
m/s2
For power-loss calculations only
TVJ = TVJM
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2006 POWERSEM reserves the right to change limits, test conditions and dimensions
PSD 61
200
10
IF(OV)
-----IFSM
IFSM (A)
[A]
TVJ=45°C
1.6
150
2
As
TVJ=150°C
1000
4
900
1.4
TVJ=45°C
1.2
100
TVJ=150°C
1
50
0 VRRM
TVJ= 150°C
TVJ= 25°C
0.8
1/2 VRRM
IF
0.6
1 VRRM
10
0
0.5
1
VF[V]
1.5
0.4
2
0
Fig. 1 Forward current versus
voltage drop per diode
300
[W]
1
10
10
t[ms]
2
3
1
2
3
10
10
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
4
t [ms]
6
10
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
95
PSD 61
0.23 0.15
250
= RTHCA [K/W]
0.31
TC
100
105
120
DC
sin.180°
rec.120°
rec.60°
rec.30°
[A]
110
200
0.48
115
80
120
150
125
0.81
130
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
PVTOT
0
135
1.81
140
IdAV
145
0
°C
150
25
IFAVM
75
40
[A]
0
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
50
100
150
200
TC(°C)
Fig.5 Maximum forward current
at case temperature
2
K/W
Z thJK
1.5
Z thJC
1
0.5
Zth
0.01
0.1 t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2006 POWERSEM reserves the right to change limits, test conditions and dimensions