Three Phase Rectifier Bridges PSD 61 IdAVM = 100 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 61/08 PSD 61/12 PSD 61/14 PSD 61/16 PSD 61/18 Symbol Test Conditions IdAVM IFSM TC = 100 module ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight Maximum Ratings 100 A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1100 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 900 990 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 5020 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4050 4060 A2 s A2 s -40 ... + 150 150 -40 ... + 125 °C °C °C 2500 3000 V∼ V∼ 5 100 Nm g 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque typ. (M5) Features • Package with fast-on terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM ≤ ≤ 0.5 10 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C ≤ 1.4 V 0.8 5 V mΩ per diode; DC current per module 1.12 0.28 K/W K/W RthJK per diode; DC current per module 1.5 0.375 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 16.1 7.5 50 mm mm m/s2 For power-loss calculations only TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2006 POWERSEM reserves the right to change limits, test conditions and dimensions PSD 61 200 10 IF(OV) -----IFSM IFSM (A) [A] TVJ=45°C 1.6 150 2 As TVJ=150°C 1000 4 900 1.4 TVJ=45°C 1.2 100 TVJ=150°C 1 50 0 VRRM TVJ= 150°C TVJ= 25°C 0.8 1/2 VRRM IF 0.6 1 VRRM 10 0 0.5 1 VF[V] 1.5 0.4 2 0 Fig. 1 Forward current versus voltage drop per diode 300 [W] 1 10 10 t[ms] 2 3 1 2 3 10 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 95 PSD 61 0.23 0.15 250 = RTHCA [K/W] 0.31 TC 100 105 120 DC sin.180° rec.120° rec.60° rec.30° [A] 110 200 0.48 115 80 120 150 125 0.81 130 100 DC sin.180° rec.120° rec.60° rec.30° 50 PVTOT 0 135 1.81 140 IdAV 145 0 °C 150 25 IFAVM 75 40 [A] 0 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 50 100 150 200 TC(°C) Fig.5 Maximum forward current at case temperature 2 K/W Z thJK 1.5 Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2006 POWERSEM reserves the right to change limits, test conditions and dimensions