Three Phase
Rectifier Bridges
PSD 36
IdAVM
VRRM
= 35 A
= 800-1800 V
Preliminary Data Sheet
VRSM
V
800
1200
1400
1600
1800
VRRM
V
800
1200
1400
1600
1800
Type
PSD 36/08
PSD 36/12
PSD 36/14
PSD 36/16
PSD 36/18
~
~
~
Symbol
Test Conditions
IdAVM
IFSM
TC = 62°C, module
TVJ = 45°C
t = 10 ms (50 Hz), sine
VR = 0
t = 8.3 ms (60 Hz), sine
35
550
600
A
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
500
550
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1520
1520
A s
2
A s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1250
1250
A s
2
A s
-40 ... + 150
150
-40 ... + 150
°C
°C
°C
2500
3000
V∼
V∼
2
18
Nm
lb. in
22
g
2
∫ i dt
TVJ
TVJM
Tstg
VISOL
50/60 HZ, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
(M5)
(10-32 UNF)
Weight
typ.
Maximum Ratings
2
2
Features
• Package with ¼” fast-on terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 148688
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394”)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM
VR = VRRM
≤
≤
0.3
2.0
mA
mA
VF
VTO
rT
RthJC
IF = 150 A
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
≤
1.7
0.8
7.4
V
V
mΩ
per diode; DC current
per module
7.5
1.25
K/W
K/W
RthJK
per diode; DC current
per module
8.4
1.4
K/W
K/W
dS
dA
a
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
2
m/s
TVJ = 25°C
TVJ = TVJM
POWERSEM GmbH, Walperdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSD 36
IF(OV)
-----IFSM
200
[A]
1:TVJ= 150°C
2:TVJ= 25°C
IFSM (A)
TVJ=45°C
TVJ=150°C
1.6
480
4
10
2
As
500
150
1.4
1.2
100
10
3
TVJ=45°C
TVJ=150°C
1
0 VRRM
50
0.8
1/2 VRRM
IF
1
0.6
2
1 VRRM
0
10
0.5
1
1.5
VF[V]
2
0.4
2.5
80
[W]
70
1
100
Fig. 1 Forward current versus
voltage drop per diode
2
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
60
PSD 36N
0.41 0.1
= RTHCA [K/W]
TC
65
2
4
t [ms]
6
10
2
Fig. 3 ∫i dt versus time
(1-10ms) per diode (or thyristor)
{ EMBED CorelDraw.Grafik.8 }
70
75
0.72
80
60
85
50
90
1.35
95
100
40
105
110
2.6
30
115
120
125
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
10
PVTOT
0
10
IFAVM
30
130
6.35
135
140
145
°C
150
[A]
0
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
Fig.5 Maximum forward current
at case temperature
{ EMBED CorelDraw.Grafik.8 }
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walperdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions