Thyristor Modules Thyristor/Diode Modules PSKT 26 PSKH 26 ITRMS ITAVM VRRM = 2x 50 A = 2x 32 A = 800-1600 V Preliminary Data Sheet VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 Type TO-240 AA Version 1 Version 8 Version 8 PSKT 26/08io1 PSKT 26/12io1 PSKT 26/14io1 PSKT 26/16io1 PSKT PSKT PSKT PSKT PSKH PSKH PSKH PSKH Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 75°C; TC = 85°C; 180° sine 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 ∫i2dt (di/dt)cr 26/08io8 26/12io8 26/14io8 26/16io8 1 50 32 27 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 520 560 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 460 500 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1300 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1050 1030 A2s A2 s TVJ = TVJM repetitive, IT = 45 A f =50 Hz, tP =200 µs VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/µs 150 A/µs 500 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM tP = 30 µs tP = 300 µs 1000 VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 °C °C °C Md Mounting torque (M5) Terminal connection torque (M5) Weight Typical including screws 5 3000 3600 V~ V~ 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g 6 7 1 5 4 2 3 6 1 5 2 3 1 5 2 Features ● ● ● ● International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Gate-cathode twin pins for version 1 Applications ● ● ● DC motor control Softstart AC motor controller Light, heat and temperature control Advantages ● ● ● ● Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 3 PSKH Version 8 ● PGAV t = 1 min t=1s 4 PSKT Version 8 V/µs W W W 50/60 Hz, RMS IISOL ≤ 1 mA 7 PSKT Version 1 ● 10 5 0.5 VISOL 6 26/08io8 26/12io8 26/14io8 26/16io8 Maximum Ratings (dv/dt)cr 3 2 Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol Test Conditions IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 80 A; TVJ = 25°C 1.64 V VT0 rT For power-loss calculations only (TVJ = 125°C) 0.85 11.0 V mΩ VGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 1.5 1.6 100 200 V V mA mA IGT VD = 6 V; Characteristic Values 3 VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.2 10 V mA IL TVJ = 25°C; tP = 10 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs 450 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/µs 2 µs tq TVJ = TVJM; IT = 20 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM QS IRM TVJ = TVJM; IT, IF = 25 A, -di/dt = 0.64 A/µs RthJC per per per per RthJK dS dA a thyristor/diode; DC current module thyristor/diode; DC current module 10 1: IGT, TVJ = 125°C mA 2: IGT, TVJ = 25°C V 3: IGT, TVJ = -40°C VG 2 1 3 1 5 6 4 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125°C 0.1 100 101 5W 6: PGM = 10 W 102 103 IG mA 104 Fig. 1 Gate trigger characteristics typ. other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration 150 µs 1000 50 6 TVJ = 25°C µC A 0.88 0.44 1.08 0.54 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 µs tgd typ. 100 Limit 10 Optional accessories for module-type PSKT 26 version 1 Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red 1 10 100 mA IG Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT/ PSKH Version 1 PSKT Version 8 PSKH Version 8 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 1000 Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKT 26 or 3 x PSKH 26 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Circuit W3 3 x PSKT 26 or 3 x PSKH 26 PSKT 26 PSKH 26 Z thJC(t) Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: RthJC (K/W) d DC 180° 120° 60° 30° 0.88 0.92 0.95 0.98 1.01 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.019 0.029 0.832 0.0031 0.0216 0.191 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) PSKT 26 PSKH 26 ZthJK(t) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 1.08 1.12 1.15 1.18 1.21 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.019 0.029 0.832 0.2 0.0031 0.0216 0.191 0.45 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20