MCC 220 MCD 220 ITRMS = 2x 400 A ITAVM = 2x 250 A VRRM = 800-1600 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 1 Version 1 Version 1 MCC 220-08io1 MCC 220-12io1 MCC 220-14io1 MCC 220-16io1 MCD 220-08io1 MCD 220-12io1 MCD 220-14io1 MCD 220-16io1 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 òi2dt 7 6 2 Type Maximum Ratings 400 250 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8500 9000 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7000 7600 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 000 336 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 245 000 240 000 A2s A2s 100 A/ms 5 4 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins ● ● (di/dt)cr TVJ = TVJM repetitive, IT = 750 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A non repetitive, IT = 250 A diG/dt = 1 A/ms (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM ● ● 800 A/ms ● 1000 V/ms Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches ● tP = 30 ms tP = 500 ms PGAV 120 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 °C °C °C 3000 3600 V~ V~ ● ● ● VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque (M5) Terminal connection torque (M8) Weight ● t = 1 min t=1s 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. Typical including screws 320 ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-4 MCC 220 MCD 220 Symbol Test Conditions Characteristic Values IRRM IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25°C VT0 rT 70 40 mA mA 1.53 V For power-loss calculations only (TVJ = 140°C) 0.9 1.0 V mW VGT VD = 6 V; IGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2 3 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ 150 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms 2 ms tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM 200 ms QS IRM TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/ms 760 275 mC A RthJC per per per per RthJK dS dA a thyristor/diode; DC current module thyristor/diode; DC current module Creepage distance on surface Strike distance through air Maximum allowable acceleration other values see Fig. 8/9 0.139 0.0695 0.179 0.0895 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 14 © 2000 IXYS All rights reserved 2-4 MCC 220 MCD 220 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature © 2000 IXYS All rights reserved 3-4 MCC 220 MCD 220 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) 0.15 30° DC K/W RthJC for various conduction angles d: ZthJC 0.10 d RthJC (K/W) 0.05 DC 180°C 120°C 60°C 30°C 0.139 0.141 0.142 0.142 0.143 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 K/W 1 2 3 ti (s) 0.0037 0.0177 0.1175 0.0099 0.168 0.456 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) 30° DC ZthJK RthJK for various conduction angles d: 0.15 0.10 0.05 d RthJK (K/W) DC 180°C 120°C 60°C 30°C 0.179 0.181 0.182 0.183 0.183 Constants for ZthJK calculation: i 0 0.00 10-3 Rthi (K/W) 10-2 10-1 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.0037 0.0177 0.1175 0.04 0.0099 0.168 0.456 1.36 835 © 2000 IXYS All rights reserved 4-4