Fast Recovery Epitaxial Diode (FRED) Module PSND 30E IFAV VRRM = 25 A = 800-1200V Preliminary Data Sheet VRSM V 800 1000 1200 VRRM V 800 1000 1200 Type PSND 30E/08 PSND 30E/10 PSND 30E/12 Symbol Test Conditions IFAV IFSM TC = 85°C TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 25 300 330 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 270 300 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 450 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 370 A2 s A2 s -40 ... + 150 150 -40 ... + 125 °C °C °C ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) 2500 3000 V∼ V∼ 5 5 160 Nm Nm g Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Short recovery time • Low forward voltage drop • Short recovery behaviour • UL registered, E 148688 Applications • Inductive heating and melting • Free wheeling diode in converters and motor control circuits • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Symbol Test Conditions Characteristic Value IR VR = VRRM TVJ = 25°C TVJ = 125°C VR = 0,8•VRRM IF = 30 A TVJ = 25°C TVJ = 25°C, IF = 1A; -di/dt = 100 A/µs; VR = 30V For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration ≤ ≤ ≤ VF trr VTO rT RthJC RthJK dS dA a POWERSEM GmbH, Walpersdorfer Str. 56 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 750 7 2 100 µA mA V ns 1.5 12.5 1.0 0.5 1.2 0.6 10 9.4 50 V mΩ K/W K/W K/W K/W mm mm m/s2 Package, style and outline Dimensions in mm (1mm = 0.0394“) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions