IXYS MEE75-12DA

MEA 75-12 DA
MEK 75-12 DA
MEE 75-12 DA
Preliminary data
VRSM
VRRM
V
V
1200
1200
TO-240 AA
MEA75-12 DA
1
2
MEK 75-12 DA
3
1
2
3
1
2
3
Test Conditions
Tcase= 75 °C
Tcase= 75 °C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
Maximum Ratings
107
75
TBD
A
A
A
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1200
1300
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1080
1170
A
A
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7200
7100
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
5800
5700
A2s
A2s
-40...+150
-40...+125
110
°C
°C
°C
280
W
3000
3600
V~
V~
TVJ
Tstg
THmax
Ptot
Tcase = 25°C
VISOL
50/60 Hz, RMS t = 1 min
t=1s
IISOL ≤ 1 mA
Md
Mounting torque (M5)
Terminal connection torque (M5)
2.50-4/22-35 Nm/lb.in.
2.50-4/22-35 Nm/lb.in.
Creep distance on surface
Strike distance through air
Maximum allowable acceleration
12.7
9.6
50
90
Weight
Symbol
Test Conditions
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
VF
IF = 100 A;
TVJ
TVJ
TVJ
TVJ
IF = 300 A;
mm
mm
m/s2
g
Characteristic Values (per diode)
typ.
max.
= 125°C
= 25°C
= 125°C
= 25°C
VT0
rT
For power-loss calculations only
RthJH
RthJC
DC current
DC current
trr
IRM
IF = 150 A
VR = 600 V
-di/dt = 200 A/µs
TVJ = 100°C
TVJ = 25°C
TVJ = 100°C
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
250
2
MEE 75-12 DA
IFRMS
IFAV
IFRM
dS
dA
a
3
1
Type
Symbol
I2t
VRRM = 1200 V
IFAV = 75 A
trr
= 250 ns
2
0.5
34
mA
mA
mA
1.85
2.17
2.58
2.64
V
V
V
V
1.48
3.65
V
mΩ
0.550
0.450
K/W
K/W
300
22
33
Features
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
●
●
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Applications
Antiparallel diode for high frequency
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
●
●
●
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Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
●
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Dimensions in mm (1 mm = 0.0394")
ns
A
A
015
Fast Recovery
Epitaxial Diode
(FRED) Module
D6 - 5
MEA 75-12 DA MEE 75-12 DA
MEK 75-12 DA
10
200
A
175
IF
100
TVJ= 100°C
µC VR = 600V
Qr
150
TVJ=125°C
TVJ= 25°C
125
TVJ= 100°C
A V = 600V
R
IF= 150A
IF= 100A
IF= 70A
8
IRM
80
6
60
4
40
2
20
IF= 150A
IF= 100A
IF= 70A
100
75
50
25
0
0
V
2
VF
1
0
10
3
Fig. 1 Forward current IF versus
voltage drop VF per leg
100
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
1.4
350
0.8
Qr
200
0.6
0.4
IF= 150A
IF= 100A
IF= 70A
250
0
50
100
150
°C 150
400
600 A/µs
800 1000
-diF/dt
2.0
µs
VFR
1.6
tfr
60
1.2
40
0.8
0
200
400
600 A/µs
800 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0
tfr
0.4
20
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus junction temperature TVJ
200
Fig. 3 Peak reverse current IRM
versus -diF/dt
80
VFR
1.0
IRM
0
A
trr 300
Kf
0
100
TVJ= 100°C
VR = 600V
ns
1.2
A/µs 1000
-diF/dt
TVJ= 100°C
IF = 150A
0
200
400
600 800
diF/dt
0.0
1000
A/µs
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
0.6
K/W
0.5
0.4
ZthJH
Constants for ZthJH calculation:
0.3
i
0.2
0.1
75-12 DA
0.0
0.001
0.01
0.1
t
ti (s)
0.037
0.138
0.093
0.282
0.002
0.134
0.25
0.274
10
016
Fig. 7 Transient thermal impedance junction to heatsink
1s
1
2
3
4
Rthi (K/W)
D6 - 6
© 2000 IXYS All rights reserved