MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA Preliminary data VRSM VRRM V V 1200 1200 TO-240 AA MEA75-12 DA 1 2 MEK 75-12 DA 3 1 2 3 1 2 3 Test Conditions Tcase= 75 °C Tcase= 75 °C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM Maximum Ratings 107 75 TBD A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1200 1300 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1080 1170 A A TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 7100 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5800 5700 A2s A2s -40...+150 -40...+125 110 °C °C °C 280 W 3000 3600 V~ V~ TVJ Tstg THmax Ptot Tcase = 25°C VISOL 50/60 Hz, RMS t = 1 min t=1s IISOL ≤ 1 mA Md Mounting torque (M5) Terminal connection torque (M5) 2.50-4/22-35 Nm/lb.in. 2.50-4/22-35 Nm/lb.in. Creep distance on surface Strike distance through air Maximum allowable acceleration 12.7 9.6 50 90 Weight Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM VF IF = 100 A; TVJ TVJ TVJ TVJ IF = 300 A; mm mm m/s2 g Characteristic Values (per diode) typ. max. = 125°C = 25°C = 125°C = 25°C VT0 rT For power-loss calculations only RthJH RthJC DC current DC current trr IRM IF = 150 A VR = 600 V -di/dt = 200 A/µs TVJ = 100°C TVJ = 25°C TVJ = 100°C Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 250 2 MEE 75-12 DA IFRMS IFAV IFRM dS dA a 3 1 Type Symbol I2t VRRM = 1200 V IFAV = 75 A trr = 250 ns 2 0.5 34 mA mA mA 1.85 2.17 2.58 2.64 V V V V 1.48 3.65 V mΩ 0.550 0.450 K/W K/W 300 22 33 Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 ● ● ● ● ● ● ● Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders ● ● ● ● ● Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses ● ● ● ● Dimensions in mm (1 mm = 0.0394") ns A A 015 Fast Recovery Epitaxial Diode (FRED) Module D6 - 5 MEA 75-12 DA MEE 75-12 DA MEK 75-12 DA 10 200 A 175 IF 100 TVJ= 100°C µC VR = 600V Qr 150 TVJ=125°C TVJ= 25°C 125 TVJ= 100°C A V = 600V R IF= 150A IF= 100A IF= 70A 8 IRM 80 6 60 4 40 2 20 IF= 150A IF= 100A IF= 70A 100 75 50 25 0 0 V 2 VF 1 0 10 3 Fig. 1 Forward current IF versus voltage drop VF per leg 100 Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 350 0.8 Qr 200 0.6 0.4 IF= 150A IF= 100A IF= 70A 250 0 50 100 150 °C 150 400 600 A/µs 800 1000 -diF/dt 2.0 µs VFR 1.6 tfr 60 1.2 40 0.8 0 200 400 600 A/µs 800 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 0 tfr 0.4 20 TVJ Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ 200 Fig. 3 Peak reverse current IRM versus -diF/dt 80 VFR 1.0 IRM 0 A trr 300 Kf 0 100 TVJ= 100°C VR = 600V ns 1.2 A/µs 1000 -diF/dt TVJ= 100°C IF = 150A 0 200 400 600 800 diF/dt 0.0 1000 A/µs Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 0.6 K/W 0.5 0.4 ZthJH Constants for ZthJH calculation: 0.3 i 0.2 0.1 75-12 DA 0.0 0.001 0.01 0.1 t ti (s) 0.037 0.138 0.093 0.282 0.002 0.134 0.25 0.274 10 016 Fig. 7 Transient thermal impedance junction to heatsink 1s 1 2 3 4 Rthi (K/W) D6 - 6 © 2000 IXYS All rights reserved