BC80W7 TRANSISTOR (PNP) BC807-16W BC807-25W BC807-40W SOT-23 FEATURES ·Ldeally suited for automatic insertion ·epitaxial planar die construction ·complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 1. BASE 2. EMITTER 3. COLLECTOR 807-40:5C MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= -10μA, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage VEBO IE= -1μA, IC=0 -5 V Collector cut-off current ICBO VCB= -45V, IE=0 -0.1 μA Collector cut-off current ICEO VCE= -40V, IB=0 -0.2 μA Emitter cut-off current IEBO VEB= -4 V, IC=0 -0.1 μA DC current gain 100 807-16 807-25 hFE(1) VCE= -1V, IC= -100mA 807-40 250 160 400 250 600 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500mA, IB= -50mA -1.2 V Transition frequency fT VCE= -5V, IC= -10mA f=100MHz 100 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC80W7 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５