RECTRON CSA950 SEMICONDUCTOR TECHNICAL SPECIFICATION PNP Planar Epitaxial Transistor TO-92 1. BASE 2. EMITTER 3. COLLECTOR DIM MIN MAX A 4.32 5.33 B 4.45 5.2 C 3.18 4.19 D 0.41 0.50 E 0.35 0.50 F 5q 5q G 1.14 1.40 H 1.14 1.53 K 12.70 - Absolute Maximun Ratings (Ta=25oC) Symbol Ratings Unit Collector-Emmiter Voltage VCEO 30 V Collector Base Voltage VCBO 35 V Emitter Base Voltage VEBO 5 V Collector current IC 800 mA Emitter Current IE M 800 mA Collector Power Dissipation PC 600 mW Tj Tstg -50 to +150 °C Operating and Storage Junction Temperature Range Characteristics Ratings (at Ta = 25°C unless otherwise specified) Symbol Test Conditions min. Typ. max. Unit Collector Emitter Voltage VCEO IC = 10mA, IB=0 Collector Cut off Current ICBO V C = 35V, IE=0 0.1 µA Emitter Cut off Current IEBO V EB = 5V, IC =0 0.1 µA DC Current Gain Collector Emitter Saturation Voltage Base Emitter on Voltage Transition Frequency Collector Output Capacitance 30 hFE (1) V CE = 1V, IC = 100mA 100 hFE (2) V CE = 1V, IC = 700mA 35 V 320 VCE (SAT)* IC = 500mA, IB = 20mA VBE (on) fT Cob * Pulse Condition: Width < 300mS, Duty Cycle < 2% V CE = 5V, IC = 10mA IC = 10mA, V CE=5V V CB = 10V, IE = 0, f = 1MHz 0.7 0.5 V 0.8 120 MHz 19 pF