RECTRON MMBT3904

MMBT3904
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM
0.2 W(Tamb=25OC)
* Collector current
ICM
0.2 A
* Collector-base voltage
V(BR)CBO: 60 V
* Operating and storage junction temperature range
TJ,Tstg: -55OCto+150OC
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
BASE
0.055(1.40)
0.047(1.20)
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.019(2.00)
0.071(1.80)
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
1
0.118(3.00)
3 0.110(2.80)
2
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted )
RATINGS
SYMBOL
VALUE
UNITS
O
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C
PD
300
mW
Max. Operating Temperature Range
TJ
150
o
C
-55 to +150
o
C
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Notes : 1.Alumina=0.4*0.3*0.024in.99.5% alumina
2." Fully ROHS Compliant "," 100% Sn plating (Pb-free)".
SYMBOL
MIN.
TYP.
MAX.
R qJA
-
-
417
UNITS
o
C/W
2007-5
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I C = 1mAdc, I B = 0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage (I C = 10uAdc, I E = 0)
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdown Voltage (I E = 100uAdc, I C = 0)
V(BR)EBO
6.0
-
Vdc
IBL
-
50
nAdc
ICEX
-
50
nAdc
DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc)
40
-
(I C = 1.0mAdc, V CE = 1.0Vdc)
70
-
Base Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc)
Collector Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc)
ON CHARACTERISTICS(1)
(I C = 10mAdc, V CE = 1.0Vdc)
hFE
100
300
(I C = 50mAdc, V CE = 1.0Vdc)
60
-
(I C = 100mAdc, V CE = 1.0Vdc)
30
-
-
0.2
-
0.3
0.65
0.85
-
0.95
fT
300
-
MHz
Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz)
Cobo
-
4.0
pF
Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz)
Cibo
-
8.0
pF
Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
hie
1.0
10
kohms
Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
hre
0.5
8.0
X 10 -4
Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
hfe
100
400
-
Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz)
hoe
1.0
40
umhos
Noise Figure (V CE = 5.0Vdc, I C = 100uAdc, R S = 1.0kohms, f= 1.0kHz)
NF
-
5.0
dB
td
-
35
tr
-
35
ts
-
200
tf
-
50
Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc)
Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc)
VCE(sat)
VBE(sat)
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 20Vdc, f= 100MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 3.0Vdc, V BE = -0.5Vdc, I C = 10mAdc, I B1 = 1.0mAdc)
(V CC = 3.0Vdc, I C = 10mAdc, I B1 = I B2 = 1.0mAdc)
<300ms,Duty Cycle<2.0%
Note : Pulse Test: Pulse Width-
ns
ns
RATING AND CHARACTERISTICS CURVES ( MMBT3904 )
- TJ= 25
C
O
--
10
VCC=40V
IC=IB =10
3000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (PF)
O
5000
7.0
Cibo
3.0
Cobo
2.0
1.0
TJ=125 C
0.1
0.2 0.3 0.5 0.7 1.0
500
QT
300
200
100
70
50
20 30 40
2.0 3.0 5.0 7.0 10
1000
700
QA
1.0
2.0 3.0
REVERSE BIAS VOLTAGE ( V)
40V
15V
10
5.0 7.0 10
20 30
50 70 100
300
200 IC/IB =20
50
30
20
7
5
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn-On Time
Figure 4. Rise Time
IC/IB =10
IC/IB =10
30
20
VCC=40V
IB1=IB2
300
200
IC/IB =20
50
200
500
t's=ts-1/8tf
IB1=IB2
100
70
IC/IB =20
100
70
50
IC/IB =10
30
20
10
10
7
5
100
70
10
2.0V
td@VOB=0 V
500
t's, STORAGE TIME (ns)
tr, RISE TIME (ns)
30
20
tf, FALL TIME (ns)
TIME (ns)
50
2.0 3.0
200
VCC=40V
IC=IB=10
300
200
tr@VCC=3.0V
1.0
50 70 100
500
IC/IB =10
300
200
7
5
20 30
Figure 2. Charge Data
Figure 1. Capacitance
500
100
70
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
7
5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Storage Time
Figure 6. Fall Time
200
RATING AND CHARACTERISTICS CURVES ( MMBT3904 )
10
SOURCE RESISTANCE=200W
IC=0.5mA
8
6
SOURCE RESISTANCE=1.0k
IC= 50uA
4
2
0
0.1
14
SOURCE RESISTANCE=200W
IC=1.0mA
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
12
SOURCE RESISTANCE=500W
IC= 100uA
0.2
0.4
1.0
2.0
f = 1.0 kHz I =1.0mA
C
12
IC=0.5mA
10
IC= 100uA
6
4
2
4.0
10
20
40
0
100
0.1
f, FREQUENCY (KHz)
0.2
0.4
1.0
Figure 7.
hoe, OUTPUT ADMITTANCE (umhos)
hfe, CURRENT GAIN
100
70
50
0.5
1.0
2.0 3.0
5.0
40
100
5.0
10
20
50
20
10
5
2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT(mA)
Figure 9. Current Gain
Figure 10. Output Admittance
hre, VOLTAGE FEEDBACK RATIO (X 10-4)
hie, INPUT IMPEDANCE (KOHMS)
10
100
1
10
20
10
5.0
2.0
1.0
0.5
0.2
0.1
4.0
Figure 8.
200
0.2 0.3
2.0
RS, SOURCE RESISTANCE (KOHMS)
300
30
0.1
IC= 50uA
8
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
Figure 12.Voltage Feedback Ratio
10
hFE, DC CURRENT GAIN (NORMALIZED)
RATING AND CHARACTERISTICS CURVES ( MMBT3904 )
2.0
TJ=+125OC
VCE =1.0V
+25OC
1.0
0.7
-55OC
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13.DC Current Gain
1.0
TJ=25OC
0.8
IC=1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 14.Collector Saturation Region
1.0
TJ=25OC
VBE (sat) @ IC/IB=10
V, VOLTAGE (V)
1.0
0.8
VBE @ VCE=1.0V
0.6
0.4
VCE (sat) @ IC/IB=10
1.0
O
2.0
5.0
10
20
50
100
200
O
+25 C TO+125 C
0.5
qVC FOR VCE(sat)
0
O
O
O
O
-55 C TO+25 C
-0.5
-55 C TO+25 C
-1.0
O
-2.0
0
20
40
60
80
O
+25 C TO+125 C
qVB FOR VBE(sat)
-1.5
0.2
0
COEFFICIENT (mV/OC)
1.2
100
120 140
160
180 200
IC,COLLECTOR CURRENT(mA)
IC, COLLECTOR CURRENT (mA)
Figure 15."ON" Voltages
Figure 16.Temperature Coefficients
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in
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