SMD General Purpose Transistor (NPN) MMBT3904 SMD General Purpose Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT3904 Unit Conditions VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 200 mA 225 mW TA=25 ˚C PD Total Device Power Dissipation(Note 1) 1.8 mW/°C Derate above 25 ˚C Thermal Resistance, Junction to Ambient 556 °C /W Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C Thermal Resistance, Junction to Ambient 417 °C /W Junction Temperature -55 to +150 °C Storage Temperature Range -55 to +150 °C RθJA PD RθJA TJ TSTG Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. C/CZ Page 1 of 9 SMD General Purpose Transistor (NPN) MMBT3904 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage (Pulse width ≤300µs, Duty Cycle ≤2.0%) 40 - V IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=10µA, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0 Base Cut-off Current - 50 nA VEB=3V, VCE=30V Collector Cut-off Current - 50 nA VEB=3V, VCE=30V Min. Max. Unit Conditions 40 - VCE=1V, IC=0.1mA 70 - VCE=1V, IC=1mA 100 300 VCE=1V, IC=10mA 60 - VCE=1V, IC=50mA 30 - VCE=1V, IC=100mA - 0.2 IBL ICEX On Characteristics Symbol hFE Description D.C. Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC=10mA, IB=1mA V - 0.3 0.65 0.85 IC=50mA, IB=5mA IC=10mA, IB=1mA V IC=50mA, IB=5mA - 0.95 Description Min. Max. Unit Current Gain-Bandwidth Product 300 - MHz Small-signal Characteristics Symbol fT COBO Output Capacitance - 4.0 pF CIBO Input Capacitance - 8.0 pF hie Input Impedance 1.0 10 kohms hre Voltage Feedback Ratio 0.5 8.0 x 10 hfe Small-Signal Current Gain 100 400 - hoe Output Admittance 1.0 40 UMHOS NF Noise Figure - 5.0 dB -4 Conditions VCE=20V, IC=10mA, f=100MHz VCB=5V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCE=5V, IC=100µA, Rs=1.0kohms, f=1kHz Rev. C/CZ www.taitroncomponents.com Page 2 of 9 SMD General Purpose Transistor (NPN) MMBT3904 Switching Characteristics Symbol Min. Max. Delay Time - 35 tr Rise Time - 35 ts Storage Time - 200 tf Fall Time - 50 td Description Unit Conditions VCC=3V, VBE=-0.5V IC=10mA, IB1=1mA ns VCC=3V, IC=10mA, IB1= IB2=1mA Equivalent Test Circuit Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time Total Shunt Capacitance of test jig and connectors Rev. C/CZ www.taitroncomponents.com Page 3 of 9 SMD General Purpose Transistor (NPN) MMBT3904 Typical Characteristics Curves ( TJ =25°C --- TJ =125°C ) Fig.4- Charge Data Charge Q (pC) Capacitance (pF) Fig.3- Capacitance Reverse Bias Voltage (V) Collector Current IC (mA) Fig.6- Rise Time Time (ns) Rise Time tr (nS) Fig.5- Turn-On Time Collector Current IC (mA) Collector Current IC (mA) Rev. C/CZ www.taitroncomponents.com Page 4 of 9 SMD General Purpose Transistor (NPN) MMBT3904 Fig.8- Fall Time Fall Time tf (ns) Storage Time ts (ns) Fig.7- Storage Time Collector Current IC (mA) Collector Current IC (mA) Typical Audio Small-Signal Characteristics Noise Figure Variations (VCE=5.0 V. TA=25°C, Bandwidth=1.0Hz) Fig.10- Noise Figure Noise Figure NF (dB) Noise Figure NF (dB) Fig.9- Noise Figure Frequency f (kHz) Source Resistance RS (kΩ) Rev. C/CZ www.taitroncomponents.com Page 5 of 9 SMD General Purpose Transistor (NPN) MMBT3904 h Parameters (VCE=10V, f=1.0kHz, TA=25°C) Fig.11- Current Gain Current Gain hfe Output Admittance hoe (μ mhos) Fig.12- Output Admittance Collector Current IC (mA) Collector Current IC (mA) Fig.14- Voltage Feedback Ratio Input Impedance hie (KΩ) -4 Voltage Feedback Ratio hfe (x10 ) Fig.13- Input Impedance Collector Current IC (mA) Collector Current IC (mA) Rev. C/CZ www.taitroncomponents.com Page 6 of 9 SMD General Purpose Transistor (NPN) MMBT3904 Typical Static Characteristics DC Current Gain hFE (Normalized) Fig.15- DC Current Gain Collector Current IC (mA) Collector-Emitter Voltage VCE (V) Fig.16- Collector Saturation Region Base Current IB (mA) Rev. C/CZ www.taitroncomponents.com Page 7 of 9 SMD General Purpose Transistor (NPN) MMBT3904 Fig.18- Temperature Coefficients Voltage (V) Temperature Coefficient (mV/°C) Fig.17- “On” Voltage Collector Current IC (mA) Collector Current IC (mA) Device Marking: MMBT3904=1A/1AM/ZC Dimensions in mm SOT-23 Rev. C/CZ www.taitroncomponents.com Page 8 of 9 SMD General Purpose Transistor (NPN) MMBT3904 How to contact us US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED TAIWAN, TAIPEI 6F., No.190, Sec. 2, Zhongxing Rd., Xindian Dist., New Taipei City 23146, Taiwan R.O.C. Tel: 886-2-2913-6238 Fax: 886-2-2913-6239 TAITRON COMPONENT TECHNOLOGY, SHANGHAI CORPORATION METROBANK PLAZA,1160 WEST YAN’AN ROAD, SUITE 1503, SHANGHAI,200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-2302-5027 CROSS REGION PLAZA, 899 LINGLING ROAD, SUITE 18C, SHANGHAI, 200030, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. C/CZ www.taitroncomponents.com Page 9 of 9