MMBT2907A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 0.047(1.20) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 1 0.118(3.00) 3 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS SYMBOL VALUE UNITS o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ 150 o C -55 to +150 o C Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. " Fully ROHS Compliant ", "100% Sn plating (Pb-free)". SYMBOL MIN. TYP. MAX. R qJA - - 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (I C = -10 mAdc, I B = 0) V(BR)CEO -60 - Vdc Collector-Base Breakdown Voltage (I C = -10uAdc, I E = 0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (I E = -10uAdc, I C = 0) V(BR)EBO -5.0 - Vdc ICEX - -50 nAdc - -0.02 - -20 - -50 75 - 100 - 100 - (I C = -150mAdc, V CE = -10Vdc)(1) 100 300 (I C = -500mAdc, V CE = -10Vdc)(1) 50 - - -0.4 - -1.6 - -1.3 - -2.6 Collector Cutoff Current (V CE = -30Vdc, V BE(off) = -5.0Vdc) Collector Cutoff Current (V CB = -50Vdc, I E = 0) O (V CB = -50Vdc, I E = 0, TA= 125 C) Base Current (V CE = -30Vdc, V EB(off) = -0.5Vdc) ICBO IB uAdc nAdc ON CHARACTERISTICS DC Current Gain (I C = -0.1mAdc, V CE = -10Vdc) (I C = -1.0mAdc, V CE = -10Vdc) (I C = -10mAdc, V CE = -10Vdc) Collector-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) Base-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) hFE VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS fT 200 - MHz Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Cobo - 8.0 pF Input Impedance (V EB = -2.0Vdc, I C = 0, f= 1.0MHz) Cibo - 30 pF ton - 45 td - 10 Rise Time tr - 40 Turn-Off Time toff - 100 ts - 80 tf - 30 Current-Gain-Bandwidth Product (1)(2) (I C = -50mAdc, V CE = -20Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time Storage Time (V CC = -30Vdc ,I C = -150mAdc, I B1 = -15mAdc) (V CC = -6.0Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc) Fall Time <300ms,Duty Cycle-<2.0% NOTES : 1. Pulse Test: Pulse Width2. fT is defined as the frequency at which |hFE| extrapolates to unity ns ns RATING AND CHARACTERISTICS CURVES ( MMBT2907A ) hFE, NORMALIZED CURRENT GAIN 3.0 VCE= -1.0V VCE= -10V 2.0 TJ = 125OC 25OC 1.0 -55OC 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -30 -50 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR - EMITTERVOLTAGE (V) Figure 1. DC Current Gain ±1.0 ±0.8 IC = - 1.0mA - 10mA - 100 mA - 500 mA ±0.6 ±0.4 ±0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 500 100 70 50 300 VCC=-30V IC/IB=10 TJ=25OC tr 200 t,TIME(ns) t, TIME (ns) 300 200 30 20 td @ VBE(off)=0V 7.0 5.0 2.0 V -20 -30 tf 100 70 50 30 t's=t's-1/8tf 20 10 3.0 -5.0 -7.0 -10 VCC=-30V IC/IB=10 IB1=IB2 TJ=25OC -50 -70 -100 -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Turn - On Time Figure 4. Turn - Off Time -500 RATING AND CHARACTERISTICS CURVES ( MMBT2907A ) 10 10 8.0 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1.0 kHz IC = - 1.0mA , RS=430W - 500 uA , RS=560W - 50 uA , RS=2.7kW - 100 uA , RS=1.6kW 6.0 4.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC = - 50uA - 100 uA - 500 uA - 1.0mA 4.0 2.0 RS= OPTIMUM SOURCE RESISTANCE 2.0 6.0 0 50 50 100 100 200 Figure 5.Frequency Effects 30 Ceb C, CAPACITANCE (pF) 20 10 7.0 Ccb 5.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 REVERSE VOLTAGE (V) 5.0k 10k 20k 50k Figure 6.Source Resistance Effects 400 300 200 100 80 VCE = -20V TJ = 25OC 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 IC, COLLECTOR CURRENT (mA) Figure 7.Capacitances Figure 8.Currunt-Gain Bandwidth Product +0.5 -1.0 -0.8 -0.6 0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10V -0.4 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 RqVC for VCE(sat) ±0.5 ±1.0 ±1.5 RqVB for VBE ±2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 COEFFICIENT (mV/ oC) TJ = 25OC V, VOLTAGE (VOLTS) 500 1.0k 2.0k RS, SOURCE RESISTANCE (OHMS) fT, CURRENT±GAIN Ð BANDWIDTH PRODUCT(MHz) f, FREQUENCY (KHz) -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) Figure 9."On" Voltages ±2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) Figure 10.Temperature Coefficients DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. 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