RECTRON DTA114TCA SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 DIGITAL TRANSISTORS TRANSISTORS(PNP) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit). * The bias resistors conisit of thin-film resistors with complete isolation to without connecting external input. They also have the advantage of almost completely Eliminating parasitic effects. SOT-23 * Only the on/off conditions need to be set for operation marking device design easy. MECHANICAL DATA * * * * * 0.055(1.40) 0.047(1.20) Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) f 0.022(0.55) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (1) 0.079(2.00) 0.071(1.80) O (2) Ratings at 25 C ambient temperature unless otherwise specified. (2) 0.004(0.10) 0.000(0.00) (3) 0.118(3.00) 0.110(2.80) (1) (1) BASE (2) EMITTER (3) COLLECTOR (3) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) RATINGS SYMBOL VALUE UNITS Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-base Voltage VEBO -5 V Collector Continuous Current IC -100 mA Collector Dissipation PC 200 mW TJ ,TSTG -55 to +150 Junction and storage Temperature o C o ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS Collector-base breakdown voltage (IC= -50mA,IE=0) V(BR)CBO -50 - - V Collector-emitter breakdown voltage (IC= -1mA,IB=0) V(BR)CEO -50 - - V Emitter-base breakdown voltage (IE= -50mA,IC=0) V(BR)EBO -5 - - V Collector cut-off current (VCB= -50V,IE=0) ICBO - - -0.5 mA Emitter cut-off current (VEB= -4V,IC=0) IEBO - - -0.5 mA DC current gain (VCE= -5V,IC= -1mA) hFE 100 250 600 VCE(sat) - - -0.3 V Transistion frequency (VCE= -10V,IC= -5mA,f=100MHz) fT - 250 - MHz Input resistor R1 7 10 13 Collector-emitter saturation voltage (IC= -10mA,IB= -1mA) Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)". KW 2006-3 1K VCE = -5V hFE, DC CURRENT GAIN 500 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE, (V) RATING AND CHARACTERISTICS CURVES ( DTA114TCA ) -1 IC/IB = 20 -500m -200m 200 100 -100m Ta = 100 OC 25 OC -40OC 50 Ta = 100 OC 25 OC -40OC -50m -20m 20 10 -10m 5 2 1 -100u -200u -500u -1m -2m -5m -10m -20m -50m -100m -5m -2m -1m -100u -200u -500u IC, COLLECTOR CURRENT(A) -1m -2m -5m -10m -20m -50m -100m IC, COLLECTOR CURRENT(A) Figure 1 DC current gain vs. collector current Figure 2 Collector-emitter saturation voltage vs.collector current COLLECTOR BASE R1 EMITTER Figure3 Equivalent circuit RECTRON DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. RECTRON