RECTRON DTA114TCA

RECTRON
DTA114TCA
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 DIGITAL TRANSISTORS
TRANSISTORS(PNP)
FEATURES
* Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.(see equivalent circuit).
* The bias resistors conisit of thin-film resistors with complete isolation to without connecting external input.
They also have the advantage of almost completely Eliminating parasitic effects.
SOT-23
* Only the on/off conditions need to be set for operation marking device design easy.
MECHANICAL DATA
*
*
*
*
*
0.055(1.40)
0.047(1.20)
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
f 0.022(0.55)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(1)
0.079(2.00)
0.071(1.80)
O
(2)
Ratings at 25 C ambient temperature unless otherwise specified.
(2)
0.004(0.10)
0.000(0.00)
(3)
0.118(3.00)
0.110(2.80)
(1)
(1) BASE
(2) EMITTER
(3) COLLECTOR
(3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
VALUE
UNITS
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-base Voltage
VEBO
-5
V
Collector Continuous Current
IC
-100
mA
Collector Dissipation
PC
200
mW
TJ ,TSTG
-55 to +150
Junction and storage Temperature
o
C
o
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNITS
Collector-base breakdown voltage (IC= -50mA,IE=0)
V(BR)CBO
-50
-
-
V
Collector-emitter breakdown voltage (IC= -1mA,IB=0)
V(BR)CEO
-50
-
-
V
Emitter-base breakdown voltage (IE= -50mA,IC=0)
V(BR)EBO
-5
-
-
V
Collector cut-off current (VCB= -50V,IE=0)
ICBO
-
-
-0.5
mA
Emitter cut-off current (VEB= -4V,IC=0)
IEBO
-
-
-0.5
mA
DC current gain (VCE= -5V,IC= -1mA)
hFE
100
250
600
VCE(sat)
-
-
-0.3
V
Transistion frequency (VCE= -10V,IC= -5mA,f=100MHz)
fT
-
250
-
MHz
Input resistor
R1
7
10
13
Collector-emitter saturation voltage (IC= -10mA,IB= -1mA)
Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
KW
2006-3
1K
VCE = -5V
hFE, DC CURRENT GAIN
500
VCE(sat), COLLECTOR-EMITTER SATURATION
VOLTAGE, (V)
RATING AND CHARACTERISTICS CURVES ( DTA114TCA )
-1
IC/IB = 20
-500m
-200m
200
100
-100m
Ta = 100 OC
25 OC
-40OC
50
Ta = 100 OC
25 OC
-40OC
-50m
-20m
20
10
-10m
5
2
1
-100u -200u -500u
-1m
-2m
-5m -10m -20m -50m -100m
-5m
-2m
-1m
-100u -200u -500u
IC, COLLECTOR CURRENT(A)
-1m
-2m
-5m -10m -20m -50m -100m
IC, COLLECTOR CURRENT(A)
Figure 1 DC current gain vs. collector current
Figure 2 Collector-emitter saturation voltage
vs.collector current
COLLECTOR
BASE
R1
EMITTER
Figure3 Equivalent circuit
RECTRON
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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RECTRON