RECTRON SEMICONDUCTOR MMST2222A TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: 0.6 A * Collector-base voltage V(BR)CBO: 75 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.052(1.33) 0.050(1.27) Ratings at 25 o C ambient temperature unless otherwise specified. 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) SYMBOL VALUE UNITS - - - Max. Steady State Power Dissipation @TA=25oC PD 200 mW Max. Operating Temperature Range TJ -55 to +150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL MIN. TYP. MAX. R θJA - - 625 VF - - - UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (I C = 10µAdc, I E = 0) V(BR)CBO 75 - Vdc Emitter-Base Breakdown Voltage (I E = 10µAdc, I C = 0) V(BR)EBO 6.0 - Vdc ICEX - 10 nAdc - 10 nAdc - 10 µAdc IEBO - 10 µAdc IBL - 20 nAdc Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc Collector Cutoff Current (V CB = 60Vdc, I E = 0) O (V CB = 60Vdc, I E = 0, TA= 125 C) Emitter Cutoff Current (V EB = 3.0Vdc, I C = 0) Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc ICBO ON CHARACTERISTICS (1) 35 - (I C = 1.0mAdc, V CE = 10Vdc) 50 - (I C = 10mAdc, V CE = 10Vdc) 75 - 100 300 40 - (I C = 10mAdc, V CE = 10Vdc,TA=-55 C) 50 - (I C = 150mAdc, V CE = 1.0Vdc) 35 - Collector-Emitter Saturation Voltage (I C = 150mAdc, I B = 15mAdc) - 0.3 - 1.0 0.6 1.2 - 2.0 DC Current Gain (I C = 100µA, V CE = 10Vdc) (I C = 150mAdc, V CE = 10Vdc) hFE (I C = 500mAdc, V CE = 10Vdc) O (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS fT 300 - MHz Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz) Cibo - 25 pF Output Capacitance (I E = 0, V CB = 10Vdc, f= 1.0MHz) Cobo - 8 pF NF - 4.0 dB td - 10 tr - 25 ts - 225 tf - 60 Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 20Vdc, f= 100MHz) Noise Figure (I C = 100µAdc, V CE = 10Vdc, R S = 1.0kΩ, f= 1.0kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V BE(off) = 0.5Vdc, I C = 150mAdc, I B1 = 15mAdc) (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) ns ns NOTES : 1. Short duration test pulse used to minimize self-heating effect. RECTRON