RECTRON SEMICONDUCTOR MMST2907A TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.052(1.33) 0.050(1.27) Ratings at 25 o C ambient temperature unless otherwise specified. 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) SYMBOL VALUE UNITS - - - Max. Steady State Power Dissipation PD 200 mW Max. Operating Temperature Range TJ 150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL MIN. TYP. MAX. R θJA - - 625 VF - - - UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -10mAdc, I B = 0) V(BR)CEO -60 - Vdc Collector-Base Breakdown Voltage (I C = -10µAdc, I E = 0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (I E = -10µAdc, I C = 0) V(BR)EBO -5 - Vdc Collector Cutoff Current (V CB = -35Vdc,I B = 0) ICEO - -0.05 µAdc Collector Cutoff Current (V CB = -50Vdc, I E = 0) ICBO - -0.01 µAdc Emitter Cutoff Current (V EB = -3.0Vdc, I C = 0) IEBO - -0.01 µAdc 75 - 100 - 100 - 100 300 ON CHARACTERISTICS DC Current Gain (I C = -0.1mA, V CE = -10Vdc) (I C = -1mAdc, V CE = -10Vdc) (I C = -10mAdc, V CE = -10Vdc) hFE (I C = -150mAdc, V CE = -10Vdc) (I C = -500mAdc, V CE = -10Vdc) - 50 - Collector-Emitter Saturation Voltage (I C = -500mAdc, I B = -50mAdc) VCE(sat) - -0.6 Vdc Base-Emitter Saturation Voltage (I C = -500mAdc, I B = -50mAdc) VBE(sat) - -1.2 Vdc fT 200 - MHz Input Capacitance (V EB =-2Vdc, f= 100MHz) Cibo - 30 pF Output Capacitance (I E = 0, V CB = -10Vdc, f= 1MHz) Cobo - 8 pF ton - 50 td - 10 Rise Time tr - 40 Turn-Off Time toff - 100 ts - 80 tf - 30 SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -50mAdc, V CE = -20Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time Storage Time Fall Time (V CC = -30Vdc ,V BE(OFF) =-1.5Vdc,I C = -150mAdc, I B1 = -15mAdc) (V CC = -30Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc) RECTRON ns ns