NEW PRODUCT NEW PRODUCT NEW PRODUCT 2N3904 SMALL SIGNAL TRANSISTORS (NPN) TO-92 FEATURES 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the PNP transistor 2N3906 is recommended. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type designation MMBT3904. max. Æ 0.022 (0.55) 0.098 (2.5) E MECHANICAL DATA C B Case: TO-92 Plastic Package Weight: approx. 0.18g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Ptot 625 mW 1.5 W RqJA 250 (1) ¡C/W Junction Temperature Tj 150 ¡C Storage Temperature Range TS Ð 65 to +150 ¡C Collector Current Power Dissipation at TA = 25¡C at TC = 25¡C Thermal Resistance Junction to Ambient Air NOTES: (1) Valid provided that leads are kept at ambient temperature. 1/5/99 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 V(BR)CBO 60 Ð V Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 V(BR)CEO 40 Ð V Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 V(BR)EBO 6 Ð V Collector Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA VCEsat VCEsat Ð Ð 0.2 0.3 V V Base Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA VBEsat VBEsat Ð Ð 0.85 0.95 V V Collector-Emitter Cutoff Current VEB = 3 V, VCE = 30 V ICEV Ð 50 nA Emitter-Base Cutoff Current VEB = 3 V, VCE = 30 V IEBV Ð 50 nA DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA hFE hFE hFE hFE hFE 40 70 100 60 30 Ð Ð 300 Ð Ð Ð Ð Ð Ð Ð Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz hie 1 10 kW Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz hre 0.5 á 10Ð4 8 á 10Ð4 Ð Gain-Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz fT 300 Ð MHz Collector-Base Capacitance at VCB = 5 V, f = 100 kHz CCBO Ð 4 pF Emitter-Base Capacitance at VEB = 0.5 V, f = 100 kHz CEBO Ð 8 pF 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 100 400 Ð Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz hoe 1 40 mS Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz NF Ð 5 dB Delay Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA td Ð 35 ns Rise Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA tr Ð 35 ns Storage Time (see Fig. 2) at ÐIB1 = IB2 = 1 mA, IC = 10 mA ts Ð 200 ns Fall Time (see Fig. 2) at ÐIB1 = IB2 = 1 mA, IC = 10 mA tf Ð 50 ns Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors