Power Transistor MN611S

Power Transistor MN611S
ºC
ºC
VCB=105V
VEB=6V
IC=50mA
VCE=1V, IC=1A
IC=1.2A, IB=12mA
I FEC=6A
L=10mA
max
115
800
0.08
1.25
10
10
125
1500
0.12
1.5
105
400
Unit
µA
µA
V
V
V
mJ
45
4.44±0.2
10.2±0.3
(1.4)
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
ES/B
min
+0.3
Test Conditions
1.3±0.2
a
1.6
b
+0.2
(1.5)
Tj
Tstg
W
Symbol
External Dimensions TO220S
(Ta=25ºC)
Ratings
typ
Typical Switching Characteristics
VCC
(V)
12
RL
(Ω)
12
VBB1
(V)
10
VBB2
(V)
–5
IC
(A)
1
+0.2
0.86 –0.1
0.4±0.1
1.2±0.2
tf
IB2
ton
tstg
(mA) (µs) (µs) (µs)
–30 0.2typ 5.7typ 0.4typ
IB1
(mA)
30
0.1 –0.1
1.27±0.2
+0.3
PC
Electrical Characteristics
Unit
V
V
V
A
A
10.0 –0.5
Ratings
115±10
115±10
6
±6 (pulse ±10)
1
50 (Tc=25ºC)
1.2 (Ta=25ºC, No Fin)
150
–55 to +150
3.0 –0.5
Symbol
VCBO
VCEO
VEBO
IC
IB
8.6±0.3
Absolute Maximum Ratings (Ta=25ºC)
2.54±0.5
2.54±0.5
a) Part No.
b) Lot No.
■ IC — VCE Characteristics (typ.)
(Ta = 25ºC)
8
(Unit: mm)
■ VCE (sat) — IB Characteristics (typ.)
(Ta = 25ºC)
0.75
7
30mA
6
20mA
VCE (sat) (V)
IC (A)
IC = 2A
10mA
5
5mA
4
3
3mA
0.5
IC = 1.2A
0.25
2
IB = 1mA
1
IC = 0.5A
0
0
0
1
2
3
4
5
0
6
10
VCE (V)
100
1000
IB (mA)
■ VCE (sat) — IB Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(IC = 1.2A)
0.75
■ IFEC — VFEC Temperature Characteristics (typ.)
(VCE = 1V)
7
7
6
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
0.5
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
0.25
0
4
3
100
2
1
1
0
0
0.5
IB (mA)
typ
10
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
30
0.01
0.1
Ic (A)
j-c • j-a — t
Characteristics (Single pulse)
tstg
Ta = 25ºC
VCC = 12V
IB1 = –IB2 = 30mA
1
tf
ton
0.1
1
0
10
1
j-a
FR4 (70 • 100 • 1.6mm) Use substrate
3
■ PT — Ta Derating
(Ta = 25ºC)
20
2
Ic (A)
■ Safe Operating Area (Single pulse)
(Tc = 25ºC)
1.5
10
Ic (A)
50
1.0
■ ton• tstg •t f — IC Characteristics (typ.)
(VCE = 1V)
5000
hFE
hFE
1
0.1
0.5
VFEC (V)
■ hFE — IC Temperature Characteristics (typ.)
100
30
0.01
60
10
50
j-c
1
PC (W)
40
IC (A)
(ºC/W)
0
1000
100
j-c • j-a
1.5
ton • tstg • tf (µsec)
(Ta = 25ºC)
(VCE = 1V)
5000
1000
1.0
VBE (V)
■ hFE — IC Characteristics (typ.)
10
3
2
1000
Ta = 150ºC
125ºC
75ºC
25ºC
–55ºC
4
0
10
0
■
5
IFEC (A)
5
IC (A)
VCE (sat) (V)
6
PT =50µs
PT =500µs
PT =1ms
PT =10ms
1
30
20
0.1
0.001
Without heatsink
0.01
0.1
t (s)
1
10
10
0
0.1
1
10
VCE (V)
100 200
0
25
50
75
100
Ta (ºC)
125
150
93