Inchange Semiconductor Product Specification 2N3226 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 35 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V 5 A 75 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.17 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N3226 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=5A ;IB=1.0A 2.0 V VBE(on) Base-emitter on voltage IC=3A ; VCE=4V 2.0 V ICEO Collector cut-off current VCE=35V; IB=0 1.0 mA ICBO Collector cut-off current VCB=35V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=4V 40 hFE-2 DC current gain IC=3A ; VCE=4V 20 2 35 UNIT V Inchange Semiconductor Product Specification 2N3226 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3