Inchange Semiconductor Product Specification 2N5804 2N5805 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL PARAMETER 2N5804 VCBO VEBO EMIC S E G AN Collector-base voltage Open emitter 2N5805 VCEO INCH OND CONDITIONS 2N5804 Collector-emitter voltage VALUE 300 V 375 225 Open base 2N5805 Emitter-base voltage Open collector UNIT V 300 6 V 5 A 110 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5804 2N5805 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5804 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 225 IC=0.1A ;IB=0 V 2N5805 300 VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V Collector cut-off current VCE=RatedVCE; IB=0 10 mA ICEO 2N5804 ICEV IEBO hFE fT Collector cut-off current VCE=RatedVCE; VBE(off)=1.5V 体 半导 固电 IN R O T UC 10 D N O IC VEB=7V; IC=0 M E S E G N A CH Trainsistion frequency mA 2N5805 Emitter cut-off current DC current gain 12 IC=5A ; VCE=4V 20 IC=1A ; VCE=10V 15 2 1.0 mA 100 MHz Inchange Semiconductor Product Specification 2N5804 2N5805 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3