SAVANTIC 2N5805

SavantIC Semiconductor
Product Specification
2N5804 2N5805
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·Switching regulator
·Inverters
·Solenoid and relay drivers
·Motor controls
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5804
VCBO
Collector-base voltage
225
V
Open base
300
2N5805
VEBO
V
375
2N5804
Collector-emitter voltage
Emitter-base voltage
UNIT
300
Open emitter
2N5805
VCEO
VALUE
Open collector
6
V
5
A
110
W
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
2N5804 2N5805
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5804
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
225
V
IC=0.1A ;IB=0
300
2N5805
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
Collector cut-off current
VCE=RatedVCE; IB=0
10
mA
ICEO
2N5804
ICEV
Collector cut-off current
12
VCE=RatedVCE; VBE(off)=1.5V
mA
2N5805
10
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
20
Trainsistion frequency
IC=1A ; VCE=10V
15
fT
2
1.0
mA
100
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
2N5804 2N5805