SavantIC Semiconductor Product Specification 2N5239 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Switching regulator ·Inverters ·Power amplifiers ·Deflection circuits ·High-voltage bridge amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 225 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A IB Base current 2 A PT Total power dissipation 100 W Tj Junction temperature 200 Tstg Storage temperature -65~200 Tc=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.75 /W SavantIC Semiconductor Product Specification 2N5239 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 225 V V(BR)EBO Emitter-base breakdown voltage IE=20mA ; IC=0 6 V VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.25A 2.5 V VCEsat-2 Collector-emitter saturation voltage IC=4.5A; IB=1.125A 5.0 V VBE Base-emitter on voltage IC=2A ; VCE=10V 3.0 V ICEV Collector cut-off current VCE=300V; VBE=-1.5V TC=150 4.0 5.0 mA ICEO Collector cut-off current VCE=200V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=0.4A ; VCE=10V 20 hFE -2 DC current gain IC=2A ; VCE=10V hFE-3 DC current gain IC=4.5A ; VCE=10V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.2A ; VCE=10V 2 80 5 250 2 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N5239