SavantIC Semiconductor Product Specification 2N6751 2N6752 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N6751 VCBO Collector-base voltage 400 Open base 2N6752 VEBO V 850 2N6751 Collector-emitter voltage Emitter-base voltage UNIT 800 Open emitter 2N6752 VCEO VALUE V 450 Open collector 8 V IC Collector current 10 A IB Base current 5 A PD Total Power Dissipation 150 W Tj Junction temperature -65~175 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification 2N6751 2N6752 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6751 MIN TYP. MAX UNIT 400 IC=0.2A ;IB=0 2N6752 V 450 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=3A 3.0 V Base-emitter saturation voltage IC=5A ;IB=1A 1.3 V 2N6751 VCE=800V; VBE=-1.5V TC=100 0.1 1.0 2N6752 VCE=850V; VBE=-1.5V TC=100 0.1 1.0 2.0 VBEsat ICEV Collector cut-off current mA IEBO Emitter cut-off current VEB=8V; IC=0 hFE DC current gain IC=5A ; VCE=3V 8 40 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz 50 250 pF fT Transition frequency IC=0.2A ; VCE=10V 15 60 MHz 2 mA SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N6751 2N6752