SavantIC Semiconductor Product Specification 2N5468 2N5469 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High-voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5468 Open emitter VCBO Collector-base voltage VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector VALUE 500 UNIT V 700 2N5469 400 V 7 V IC Collector current 3 A ICM Collector current-peak 5 A IB Base current 1 A PD Total Power Dissipation 70 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 5.0 UNIT /W SavantIC Semiconductor Product Specification 2N5468 2N5469 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 2.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V ICBO Collector cut-off current VCB=ratedVCBO; IE=0 1.0 mA ICEV Collector cut-off current VCE=ratedVCEO;VBE(off)=1.5V TC=125 1.0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=3A ; VCE=5V 15 Trainsistion frequency IC=1A ; VCE=10V;f=1MHz 2.5 fT CONDITIONS 2 MIN TYP. MAX 400 UNIT V 60 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2N5468 2N5469