Inchange Semiconductor Product Specification 2N5632 2N5633 2N5634 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5632 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5633 Open emitter 120 2N5634 140 2N5632 100 2N5633 Emitter-base voltage UNIT 100 Open base 2N5634 VEBO VALUE 120 V V 140 Open collector 7 V 10 A 150 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.1 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5632 2N5633 2N5634 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5632 VCEO(SUS) Collector-emitter sustaining voltage 2N5633 MIN TYP. MAX UNIT 100 IC=0.2A ;IB=0 V 120 140 2N5634 VCEsat-1 Collector-emitter saturation voltage IC=7A; IB=0.7A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=2A 3.0 V Base-emitter saturation voltage IC=10A ;IB=2A 2.5 V Base-emitter on voltage IC=5A ; VCE=5V 1.5 V 1.0 mA VBEsat VBE ICEO Collector cut-off current 2N5632 VCE=50V; IB=0 2N5633 VCE=60V; IB=0 2N5634 VCE=70V; IB=0 ICEV Collector cut-off current VCE=ratedVCB; VBE(off)=1.5V TC=150℃ 1.0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA 2N5632 hFE DC current gain 2N5633 IC=5A ; VCE=5V 2N5634 fT Transition frequency IC=1A ; VCE=20V 2 25 100 20 80 15 60 1.0 MHz Inchange Semiconductor Product Specification 2N5632 2N5633 2N5634 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3