SavantIC Semiconductor Product Specification 2N6500 Silicon NPN Power Transistors DESCRIPTION With TO-66 package ·Wide area of operation ·High sustaining voltage · APPLICATIONS ·For high-speed switching and linearamplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A ICM Collector current-peak 5 A IB Base current 3 A PT Total power dissipation 35 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT /W SavantIC Semiconductor Product Specification 2N6500 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.5 V VBEsat Base -emitter saturation voltage IC=3A; IB=0.3A 2.5 V ICEV Collector cut-off current VCE=110V;VBE(off)=-1.5V TC=150 5.0 10 mA ICEO Collector cut-off current VCE=70V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 25 mA hFE DC current gain IC=3A ; VCE=2V COB Output capacitance IE=0 ; VCB=10V;f=1MHz 2 MIN TYP. MAX 90 15 UNIT V 60 175 pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N6500