2N6496 - Savantic

SavantIC Semiconductor
Product Specification
2N6496
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High collector current rating
·High power dissipation capability
·Wide area of safe operation
APPLICATIONS
·For switching and amplifier circuits in
Industrial and commercial applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
110
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
IB
Base current
5
A
PD
Total Power Dissipation
140
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
2N6496
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltge
IC=8A ;IB=0.8A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=0.8A
2.0
V
VBE
Base-emitter on voltage
IC=8A ; VCE=2V
1.8
V
ICEO
Collector cut-off current
VCE=90V; IB=0
1.0
mA
ICEV
Collector cut-off current
VCE=130V; VBE(off)=1.5V
TC=150
2.0
5.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE
DC current gain
IC=8A ; VCE=2V
COB
Output capacitance
IE=0;VCB=10V;f=1MHz
2
12
100
400
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
2N6496