SavantIC Semiconductor Product Specification 2N6510 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A PD Total power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification 2N6510 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.4A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICES Collector cut-off current VCE=250V; VBE(off)=-1.5V TC=100 0.1 1.5 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=4A ; VCE=3V Transition frequency IC=0.5A ; VCE=10V VBEsat fT CONDITIONS 2 MIN TYP. MAX 200 UNIT V 10 50 3 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2N6510