SavantIC Semiconductor Product Specification BU126 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter,switching mode power supply applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 750 V VCEO Collector-emitter voltage Open base 300 V IC Collector current 3.0 A ICM Collector current-peak 6.0 A IB Base current 2.0 A PT Total power dissipation 40 W Tj Junction temperature 125 Tstg Storage temperature -65~125 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 2.5 K/W SavantIC Semiconductor Product Specification BU126 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0; 300 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 6 V VCEsat-1 Collector-emitter saturation voltage IC=2.5 A;IB=0.25A 10 V VCEsat-2 Collector-emitter saturation voltage IC=4 A;IB=1A 5.0 V Base-emitter saturation voltage IC=4A;IB=1A 1.5 V ICES Collector cut-off current VCE=750V;VBE=0 Ta=125 0.5 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V COB Output capacitance IE=0; VCB=10V;f=0.5MHz 75 pF fT Transition frequency IC=0.2 A ; VCE=10V 10 MHz tf Fall time IC=2.5A ;IB=0.25A 0.2 µs VBEsat CONDITIONS 2 MIN TYP. MAX UNIT 15 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU126