Inchange Semiconductor Product Specification 2N5838 2N5839 2N5840 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High breakdown voltage APPLICATIONS ・For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO PARAMETER CONDITIONS D N O IC 2N5838 Collector-base voltage M E S E 2N5839 ANG INCH Collector-emitter voltage Open emitter 2N5840 2N5838 2N5839 Open base 2N5840 VEBO Emitter-base voltage VALUE UNIT 275 300 V 375 250 275 V 350 Open collector 6 V 3 A 100 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5838 2N5839 2N5840 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5838 VCEO(SUS) Collector-emitter sustaining voltage 2N5839 MIN TYP. MAX UNIT 250 IC=0.1A ;IB=0 V 275 2N5840 350 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 1.0 mA ICEV Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE fT 导体 半 电 固 IC=3A ; VCE=3V 8 40 2N5839/5840 IC=2A ; VCE=3V 10 50 IC=1A ; VCE=10V;f=1.0MHz 5 D N O IC DC current gain M E S GE N A H INC Transition frequency R O T UC 2N5838 2 MHz Inchange Semiconductor Product Specification 2N5838 2N5839 2N5840 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3