JMnic Product Specification 2N6671 2N6672 2N6673 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low saturation voltage ・Fast switching speed ・High voltage ratings APPLICATIONS ・Off-line power supplies ・High-voltage inverters ・Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6671 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6672 Open emitter Emitter-base voltage 550 2N6673 650 2N6671 300 2N6672 UNIT 450 Open base 2N6673 VEBO VALUE 350 V V 400 Open collector 8 V IC Collector current 8 A ICM Collector current-peak 10 A IB Base current 4 A PD Total Power Dissipation 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ JMnic Product Specification 2N6671 2N6672 2N6673 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6671 VCEO(SUS) Collector-emitter sustaining voltage 2N6672 MIN TYP. MAX UNIT 300 IC=0.2A ;IB=0 2N6673 V 350 400 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=4A 2.0 V Base-emitter saturation voltage IC=5A; IB=1A 1.6 V 0.1 mA 2.0 mA VBEsat ICEV Collector cut-off current 2N6671 VCE=450V; VBE(off)=-1.5V 2N6672 VCE=550V; VBE(off)=-1.5V 2N6673 VCE=650V; VBE(off)=-1.5V IEBO Emitter cut-off current VEB=8V; IC=0 hFE DC current gain IC=5A ; VCE=3V COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz fT Transition frequency IC=0.2A ; VCE=10V 10 40 300 pF 60 MHz 15 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 VALUE UNIT 1.17 ℃/W JMnic Product Specification 2N6671 2N6672 2N6673 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3