SavantIC Semiconductor Product Specification 2SA1227 2SA1227A Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SC2987/2987A ·High power dissipation APPLICATIONS ·For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SA1227 VCBO Collector-base voltage -140 Emitter-base voltage V Open base -160 2SA1227A VEBO V -160 2SA1227 Collector-emitter voltage UNIT -140 Open emitter 2SA1227A VCEO VALUE Open collector -5 V IC Collector current -12 A ICM Collector current-peak -20 A PT Total power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SA1227 2SA1227A Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat CONDITIONS TYP. MAX UNIT IC=-5A ;IB=-0.5A -0.8 -1.5 V Base-emitter saturation voltage IC=-5A ;IB=-0.5A -1.5 -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -50 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 µA hFE-1 DC current gain IC=-2A ; VCE=-5V 60 hFE -2 DC current gain IC=-5A ; VCE=-5V 40 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 280 pF fT Transition frequency IC=-1A ; VCE=-5V 60 MHz hFE-1 classifications R Q P 60-120 100-200 160-320 2 MIN 320 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3