SavantIC Semiconductor Product Specification 2SB995 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·High current capacity ·Low collector saturation voltage APPLICATIONS ·For audio frequency amplifier output stage applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V -5 A 40 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB995 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown votage IE=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-3A;IB=-0.3 A -1.0 V VBEsat Base-emitter saturation voltage IC=-3A;IB=-0.3 A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 Transition frequency IC=-1A ; VCE=-5V 5 fT CONDITIONS 2 MIN TYP. MAX UNIT 240 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB995