ISC 2SC3117

Inchange Semiconductor
Product Specification
2SC3117
Silicon NPN Power Transistors
DESCRIPTION
・With TO-126 package
・Complement to type 2SA1249
・High breakdown voltage
・Large current capacity
APPLICATIONS
・Color TV sound output;converters;
Inverters’ applications
・160V/1.5A switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
体
导
半
固电
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
G
N
A
H
PARAMETER
R
O
T
UC
D
N
O
IC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
180
V
Collector-emitter voltage
Open base
160
V
Emitter-base voltage
Open collector
6
V
INC
IC
Collector current
1.5
A
ICM
Collector current-peak
2.5
A
PC
Collector power dissipation
Ta=25℃
1.0
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3117
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA; RBE=∞
160
V
V(BR)CBO
Collector-base breakdown voltage
IC=10μA; IE=0
180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=500mA; IB=50mA
0.13
0.45
V
VBEsat
Base-emitter saturation voltage
IC=500mA; IB=50mA
0.85
1.2
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
μA
hFE-1
DC current gain
IC=100mA ; VCE=5V
hFE-2
DC current gain
fT
固电
Cob
‹
体
导
半
A
H
C
IN
S
T
100-200
140-280
200-400
TYP.
MAX
UNIT
R
O
T
UC
100
400
90
IC=50mA ; VCE=10V
120
MHz
IE=0 ; VCB=10V;f=1MHz
22
pF
hFE-1 Classifications
R
MIN
D
N
O
IC
IC=10mA ; VCE=5V
EM
S
E
NG
Transition frequency
Output capacitance
CONDITIONS
2
Inchange Semiconductor
Product Specification
2SC3117
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
D
N
O
IC
Fig.2 Outline dimensions
3
R
O
T
UC
Inchange Semiconductor
Product Specification
2SC3117
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC