SavantIC Semiconductor Product Specification 2SC3822 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·For power switching ,power amplifier, power driver and electronic supply applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 6 V 5 A 30 W IC Collector current PC Collector dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3822 Silicon Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=2A ; VCE=5V Transition frequency IC=0.1A ; VCE=10V 100 MHz Collector output capacitance f=1MHz;VCB=10V 25 pF fT COB CONDITIONS 2 MIN TYP. MAX 400 UNIT V 10 30 SavantIC Semiconductor Product Specification Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SC3822