Inchange Semiconductor Product Specification 2SC3842 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed ・High current capability APPLICATIONS ・For use in TV horizontal output and Power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 6 V 10 A 70 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3842 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=5V fT Transition frequency IC=1A ; VCE=10V 32 MHz COB Output capacitance IE=0 ; VCB=10V ;f=1MHz 100 pF 2 MIN TYP. 10 MAX UNIT 40 Inchange Semiconductor Product Specification 2SC3842 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3