ISC 2SC3842

Inchange Semiconductor
Product Specification
2SC3842
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage ,high speed
・High current capability
APPLICATIONS
・For use in TV horizontal output and
Power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
6
V
10
A
70
W
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3842
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
600
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=500V ;IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
32
MHz
COB
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
100
pF
2
MIN
TYP.
10
MAX
UNIT
40
Inchange Semiconductor
Product Specification
2SC3842
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3