SAVANTIC 2SB755

SavantIC Semiconductor
Product Specification
2SB755
Silicon PNP Power Transistors
DESCRIPTION
·With MT-200 package
·Complement to type 2SD845
·High transition frequency
·High breakdown voltage :VCEO=-150V(min)
·
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-12
A
IB
Base current
-1.2
A
PC
Collectorl power dissipation
120
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB755
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.1A; IB=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-5 A;IB=-0.5 A
-2.0
V
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-50
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
µA
hFE
DC current gain
IC=-1A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-10V
20
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
450
pF
VCEsat
CONDITIONS
hFE classifications
R
O
55-110
80-160
2
MIN
TYP.
55
MAX
UNIT
160
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB755