SAVANTIC 2SA969

SavantIC Semiconductor
Product Specification
2SA969
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Complement to type 2SC2239
·High breakdown votage
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
PINNING(See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-base
voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
VALUE
UNIT
Open emitter
-160
V
Open base
-160
V
-5
V
Open collector
IC
Collector current
-1.5
A
IE
Emitter current
1.5
A
PT
Total power dissipation
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SA969
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.5
V
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-160V ;IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
µA
hFE
DC current gain
IC=-100mA ; VCE=-5V
Cob
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
30
pF
fT
Transition frequency
IC=-100mA ; VCE=10V
100
MHz
VCEsat
CONDITIONS
hFE Classifications
O
Y
70-140
120-240
2
MIN
TYP.
70
MAX
UNIT
240
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SA969