SAVANTIC 2SA1327

SavantIC Semiconductor
Product Specification
2SA1327
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High current capacity
·
APPLICATIONS
·Strobe flash applications
·Audio power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-20
V
VEBO
Emitter-base voltage
Open collector
-8
V
IC
Collector current
-10
A
ICM
Collector current-peak
-20
A
IB
Base current
-2
A
PC
Collector power dissipation
TC=25
20
W
Ta=25
2
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SA1327
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA , IB=0
VCEsat
Collector-emitter saturation voltage
IC=-8A; IB=-0.4A
-0.5
V
VBE
Base-emitter on voltage
IC=-8A ; VCE=-2V
-1.5
V
ICBO
Collector cut-off current
VCB=-50V;IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-8V; IC=0
-1.0
µA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
100
hFE -2
DC current gain
IC=-8A ; VCE=-2V
70
COB
Output capacitance
IE=0 ; VCB=-10V; f=1MHz
400
pF
fT
Transition frequency
IC=-1A ; VCE=-2V
45
MHz
hFE-1 Classifications
O
Y
100-200
160-320
2
MIN
TYP.
MAX
-20
UNIT
V
320
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SA1327
SavantIC Semiconductor
Product Specification
2SA1327
Silicon PNP Power Transistors
4