SAVANTIC 2SB1411

SavantIC Semiconductor
Product Specification
2SB1411
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·Switching applications
·Hammer drive ,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-2
A
ICM
Collector current-peak
-3
A
IB
Base current
-0.5
A
20
W
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB1411
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-5mA
-2.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-5mA
-3.0
V
ICBO
Collector cut-off current
VCB=-110V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-5A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-12V
100
MHz
Collector output capacitance
f=1MHz;VCB=-10V
110
pF
1.1
µs
3.2
µs
1.1
µs
fT
COB
CONDITIONS
MIN
TYP.
MAX
-110
UNIT
V
5000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A IB1=-IB2=-5mA
VCC=30V ,RL=6B
hFE Classifications
O
p
Y
5000-12000
6500-20000
15000-30000
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1411