SavantIC Semiconductor Product Specification 2SB1411 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching applications ·Hammer drive ,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -2 A ICM Collector current-peak -3 A IB Base current -0.5 A 20 W PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1411 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-5mA -2.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-5mA -3.0 V ICBO Collector cut-off current VCB=-110V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V 100 MHz Collector output capacitance f=1MHz;VCB=-10V 110 pF 1.1 µs 3.2 µs 1.1 µs fT COB CONDITIONS MIN TYP. MAX -110 UNIT V 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A IB1=-IB2=-5mA VCC=30V ,RL=6B hFE Classifications O p Y 5000-12000 6500-20000 15000-30000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1411